Resonance-free optical response of a vertical cavity transistor laser

M. Feng, Cheng Han Wu, M. K. Wu, Chao Hsin Wu, N. Holonyak

Research output: Contribution to journalArticle

Abstract

Optical resonance in a semiconductor laser is a major limitation in high speed data communications, resulting in bit error rate degradation and requiring additional power consuming error-correction circuits to counter these effects. In this work, we report the microwave bandwidth measurement of a vertical cavity transistor laser with an oxide-confined aperture of 4.7 × 5.4 μm2 and demonstrate a 3 dB bandwidth of 11 GHz resonance-free optical response via base-current or collector-voltage modulation. The emission spectra exhibit single-mode operation around 970 nm with a narrow linewidth of Δλ ∼ 0.23 Å (cavity Q of 42 216). The resonance-free optical response is explained by the absence of carrier "accumulating" due to the fast base electron-hole recombination lifetimes and a gradient in the minority carrier charge in the transistor active mode.

Original languageEnglish (US)
Article number121106
JournalApplied Physics Letters
Volume111
Issue number12
DOIs
StatePublished - Sep 18 2017

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Fingerprint Dive into the research topics of 'Resonance-free optical response of a vertical cavity transistor laser'. Together they form a unique fingerprint.

  • Cite this