Abstract
A device that incorporates teachings of the present disclosure may include, for example, a memory array having a first array of nanotubes, a second array of nanotubes, and a resistive change material located between the first and second array of nanotubes. Other embodiments are disclosed.
| Original language | English (US) |
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| U.S. patent number | 8586961 |
| State | Published - Nov 19 2013 |