Piezoelectric properties of three sol-gel derived Pb (Zr0.53 Ti0.47) O3 thin film specimens of different thicknesses integrated onto PtTiSi O2 ∥Si substrates are investigated to delineate the influence of residual stress on the strain-field response characteristics from other thickness related effects. Residual tensile stresses are determined from wafer curvature measurements for films ranging in thickness from 190 to 500 nm. Field-induced strains are measured interferometrically for each film under either a large ac driving voltage or a small ac ripple applied over a range of dc biases. Higher residual stresses decrease measured piezoelectric response, while thickness variations with no accompanying change in residual stress state produce little change in strain-field behavior. The diminished performance associated with high residual stresses is attributed to reductions in both linear and nonlinear contributions, including decreased polarization switching and domain motion.
ASJC Scopus subject areas
- Physics and Astronomy(all)