Removal of GaAs surface contaminants using H₂ electron cyclotron resonance plasma treatment followed by Cl₂ chemical etching

Keyphrases

• Secondary Ion Mass Spectrometry 100%
• Gallium Arsenide 100%
• Plasma Treatment 100%
• Chemical Etching 100%
• GaAs Surface 100%
• Electron Cyclotron Resonance Plasma 100%
• C-Si 100%
• Surface Contaminants 100%
• Limit of Detection 50%
• Native Oxide 50%
• Atomically Smooth 50%
• Drying Process 50%
• GaAs Substrate 50%
• Mass Spectrometry Detection 50%
• Epilayer 50%
• Electron Cyclotron Resonance 50%
• Cl 2 50%
• Hydrogen Plasma 50%
• Vacuum Annealing 50%

Material Science

• Gallium Arsenide 100%
• Secondary Ion Mass Spectrometry 40%
• Oxide Compound 20%
• Epilayers 20%