Removal of GaAs surface contaminants using H2 electron cyclotron resonance plasma treatment followed by Cl2 chemical etching

M. Hong, R. S. Freund, K. D. Choquette, H. S. Luftman, J. P. Mannaerts, R. C. Wetzel

Research output: Contribution to journalArticlepeer-review

Abstract

We report a novel dry process to remove the surface contaminants C, Si, and O from GaAs substrates. This method utilizes an electron cyclotron resonance hydrogen plasma to remove the native oxides, followed by a very brief Cl 2 chemical etching of GaAs to further reduce C and Si residues, and a final vacuum anneal. Characterization by secondary ion-mass spectrometry (SIMS) typically reveals the removal of C, Si, and O at the overgrown/processed interface to the levels below the SIMS detection limit. The as-processed GaAs surface, a Ga-stabilized reconstructed (4×6), is atomically smooth, and is as clean as a surface of freshly grown GaAs epilayers.

Original languageEnglish (US)
Pages (from-to)2658-2660
Number of pages3
JournalApplied Physics Letters
Volume62
Issue number21
DOIs
StatePublished - 1993
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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