Remote polar phonon scattering for hot electrons in Si-inversion layers

The effect of the remote interfacial phonon (R.I.P.) scattering on the carrier drift velocity v is evaluated in function of the effective mobility, i.e. in function of the surface roughness. A perturbation theory using the experimental ν-F relation as a zero order approximation is used to calculate the contribution of the R.I.P. scattering. The calculation shows that the influence of this phonon mode scattering on the transport properties in Si-inversion layers is dependent on the carrier low field mobility and is of the order of 10%. The R.I.P. scattering is particularly significant in the warm electron regime, having no consequence on the saturation velocity.