Remote polar phonon scattering for hot electrons in Si-inversion layers

J. P. Leburton, G. Dorda

Research output: Contribution to journalArticlepeer-review

Abstract

The effect of the remote interfacial phonon (R.I.P.) scattering on the carrier drift velocity v is evaluated in function of the effective mobility, i.e. in function of the surface roughness. A perturbation theory using the experimental ν-F relation as a zero order approximation is used to calculate the contribution of the R.I.P. scattering. The calculation shows that the influence of this phonon mode scattering on the transport properties in Si-inversion layers is dependent on the carrier low field mobility and is of the order of 10%. The R.I.P. scattering is particularly significant in the warm electron regime, having no consequence on the saturation velocity.

Original languageEnglish (US)
Pages (from-to)1025-1026
Number of pages2
JournalSolid State Communications
Volume40
Issue number11
DOIs
StatePublished - Dec 1981
Externally publishedYes

ASJC Scopus subject areas

  • General Chemistry
  • Condensed Matter Physics
  • Materials Chemistry

Fingerprint

Dive into the research topics of 'Remote polar phonon scattering for hot electrons in Si-inversion layers'. Together they form a unique fingerprint.

Cite this