Remote-plasma chemical vapor deposition of conformal ZrB2 films at low temperature: A promising diffusion barrier for ultralarge scale integrated electronics

Junghwan Sung, Dean M. Goedde, Gregory S. Girolami, John R. Abelson

Research output: Contribution to journalArticlepeer-review

Abstract

High-quality ZrB2 thin films have been deposited at substrate temperatures as low as 300°C by a new method: remote hydrogen-plasma chemical vapor deposition from the single-source precursor Zr(BH4)4. Carrying out the deposition in the presence of atomic hydrogen generates films with properties that are far superior to those deposited by purely thermal methods; the latter are boron-rich, oxidize readily in air, and adhere poorly to the substrates. In contrast, the films generated at a substrate temperature of 300°C in the presence of atomic H have a B/Zr ratio of 2, a resistivity of 40 μcm, an oxygen content of ≤4at.%, and are fully conformal in deep vias. A 20 nm thick amorphous film of ZrB2 on c-Si(001) prevents Cu indiffusion after 30 min at 750°C. We propose that the beneficial effects of atomic hydrogen can be attributed to promoting the desorption of diborane from the growth surface.

Original languageEnglish (US)
Pages (from-to)3904-3911
Number of pages8
JournalJournal of Applied Physics
Volume91
Issue number6
DOIs
StatePublished - Mar 15 2002

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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