Reliability in room-temperature negative differential resistance characteristics of low-aluminum content AlGaN/GaN double-barrier resonant tunneling diodes

C. Bayram; Z. Vashaei; M. Razeghi

doi:10.1063/1.3515418

Reliability in room-temperature negative differential resistance characteristics of low-aluminum content AlGaN/GaN double-barrier resonant tunneling diodes

C. Bayram, Z. Vashaei, M. Razeghi

Research output: Contribution to journal › Article › peer-review

Abstract

AlGaN/GaN resonant tunneling diodes (RTDs), consisting of 20% (10%) aluminum-content in double-barrier (DB) active layer, were grown by metal-organic chemical vapor deposition on freestanding polar (c-plane) and nonpolar (m-plane) GaN substrates. RTDs were fabricated into 35-μm -diameter devices for electrical characterization. Lower aluminum content in the DB active layer and minimization of dislocations and polarization fields increased the reliability and reproducibility of room-temperature negative differential resistance (NDR). Polar RTDs showed decaying NDR behavior, whereas nonpolar ones did not significantly. Averaging over 50 measurements, nonpolar RTDs demonstrated a NDR of 67 , a current-peak-to-valley ratio of 1.08, and an average oscillator output power of 0.52 mW.

Original language	English (US)
Article number	181109
Journal	Applied Physics Letters
Volume	97
Issue number	18
DOIs	https://doi.org/10.1063/1.3515418
State	Published - Nov 1 2010
Externally published	Yes

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Physics and Astronomy (miscellaneous)

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10.1063/1.3515418

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AU - Razeghi, M.

PY - 2010/11/1

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AB - AlGaN/GaN resonant tunneling diodes (RTDs), consisting of 20% (10%) aluminum-content in double-barrier (DB) active layer, were grown by metal-organic chemical vapor deposition on freestanding polar (c-plane) and nonpolar (m-plane) GaN substrates. RTDs were fabricated into 35-μm -diameter devices for electrical characterization. Lower aluminum content in the DB active layer and minimization of dislocations and polarization fields increased the reliability and reproducibility of room-temperature negative differential resistance (NDR). Polar RTDs showed decaying NDR behavior, whereas nonpolar ones did not significantly. Averaging over 50 measurements, nonpolar RTDs demonstrated a NDR of 67 , a current-peak-to-valley ratio of 1.08, and an average oscillator output power of 0.52 mW.

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Reliability in room-temperature negative differential resistance characteristics of low-aluminum content AlGaN/GaN double-barrier resonant tunneling diodes

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