Relaxed silicon-germanium on insulator substrate by layer transfer

Zhiyuan Cheng; Gianni Taraschi; Matthew T. Currie; Chris W. Leitz; Minjoo L. Lee; Arthur Pitera; Thomas A. Langdo; Judy L. Hoyt; Dimitri A. Antoniadis; Eugene A. Fitzgerald

doi:10.1007/s11664-001-0182-0

Relaxed silicon-germanium on insulator substrate by layer transfer

Zhiyuan Cheng, Gianni Taraschi, Matthew T. Currie, Chris W. Leitz, Minjoo L. Lee, Arthur Pitera, Thomas A. Langdo, Judy L. Hoyt, Dimitri A. Antoniadis, Eugene A. Fitzgerald

Research output: Contribution to journal › Article › peer-review

Abstract

The fabrication of 4 in. relaxed Si_1-xGe_x-on-insulator (SGOI) substrates by layer transfer was demonstrated. A high-quality relaxed Si_1-xGe_x layer was grown using ultrahigh vacuum chemical vapor deposition (UHVCVD) on 4 in. Si donor wafers. Thin Si_1-xGe_x film (x = 0.2 or 0.25) was then transferred onto an oxidized Si handle wafer by bonding and wafer splitting using hydrogen implantation. The resulting relaxed SGOI structures were characterized by transmission electron microscopy (TEM) and atomic force microscopy (AFM).

Original language	English (US)
Pages (from-to)	L37-L39
Journal	Journal of Electronic Materials
Volume	30
Issue number	12
DOIs	https://doi.org/10.1007/s11664-001-0182-0
State	Published - Dec 2001
Externally published	Yes

Keywords

Bonding
Graded buffer
Relaxed SiGe-on-insulator
Smart-cut
UHVCVD

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

Online availability

10.1007/s11664-001-0182-0

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title = "Relaxed silicon-germanium on insulator substrate by layer transfer",

abstract = "The fabrication of 4 in. relaxed Si1-xGex-on-insulator (SGOI) substrates by layer transfer was demonstrated. A high-quality relaxed Si1-xGex layer was grown using ultrahigh vacuum chemical vapor deposition (UHVCVD) on 4 in. Si donor wafers. Thin Si1-xGex film (x = 0.2 or 0.25) was then transferred onto an oxidized Si handle wafer by bonding and wafer splitting using hydrogen implantation. The resulting relaxed SGOI structures were characterized by transmission electron microscopy (TEM) and atomic force microscopy (AFM).",

keywords = "Bonding, Graded buffer, Relaxed SiGe-on-insulator, Smart-cut, UHVCVD",

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year = "2001",

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doi = "10.1007/s11664-001-0182-0",

language = "English (US)",

volume = "30",

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AU - Cheng, Zhiyuan

AU - Taraschi, Gianni

AU - Currie, Matthew T.

AU - Leitz, Chris W.

AU - Lee, Minjoo L.

AU - Pitera, Arthur

AU - Langdo, Thomas A.

AU - Hoyt, Judy L.

AU - Antoniadis, Dimitri A.

AU - Fitzgerald, Eugene A.

PY - 2001/12

Y1 - 2001/12

N2 - The fabrication of 4 in. relaxed Si1-xGex-on-insulator (SGOI) substrates by layer transfer was demonstrated. A high-quality relaxed Si1-xGex layer was grown using ultrahigh vacuum chemical vapor deposition (UHVCVD) on 4 in. Si donor wafers. Thin Si1-xGex film (x = 0.2 or 0.25) was then transferred onto an oxidized Si handle wafer by bonding and wafer splitting using hydrogen implantation. The resulting relaxed SGOI structures were characterized by transmission electron microscopy (TEM) and atomic force microscopy (AFM).

AB - The fabrication of 4 in. relaxed Si1-xGex-on-insulator (SGOI) substrates by layer transfer was demonstrated. A high-quality relaxed Si1-xGex layer was grown using ultrahigh vacuum chemical vapor deposition (UHVCVD) on 4 in. Si donor wafers. Thin Si1-xGex film (x = 0.2 or 0.25) was then transferred onto an oxidized Si handle wafer by bonding and wafer splitting using hydrogen implantation. The resulting relaxed SGOI structures were characterized by transmission electron microscopy (TEM) and atomic force microscopy (AFM).

KW - Bonding

KW - Graded buffer

KW - Relaxed SiGe-on-insulator

KW - Smart-cut

KW - UHVCVD

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JO - Journal of Electronic Materials

JF - Journal of Electronic Materials

IS - 12

ER -

Relaxed silicon-germanium on insulator substrate by layer transfer

Abstract

Keywords

ASJC Scopus subject areas

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