Relaxed silicon-germanium on insulator substrate by layer transfer

Zhiyuan Cheng, Gianni Taraschi, Matthew T. Currie, Chris W. Leitz, Minjoo L. Lee, Arthur Pitera, Thomas A. Langdo, Judy L. Hoyt, Dimitri A. Antoniadis, Eugene A. Fitzgerald

Research output: Contribution to journalArticlepeer-review


The fabrication of 4 in. relaxed Si1-xGex-on-insulator (SGOI) substrates by layer transfer was demonstrated. A high-quality relaxed Si1-xGex layer was grown using ultrahigh vacuum chemical vapor deposition (UHVCVD) on 4 in. Si donor wafers. Thin Si1-xGex film (x = 0.2 or 0.25) was then transferred onto an oxidized Si handle wafer by bonding and wafer splitting using hydrogen implantation. The resulting relaxed SGOI structures were characterized by transmission electron microscopy (TEM) and atomic force microscopy (AFM).

Original languageEnglish (US)
Pages (from-to)L37-L39
JournalJournal of Electronic Materials
Issue number12
StatePublished - Dec 2001
Externally publishedYes


  • Bonding
  • Graded buffer
  • Relaxed SiGe-on-insulator
  • Smart-cut

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry


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