Relaxed silicon-germanium on insulator (SGOI)

Zhiyuan Cheng, Matthew T. Currie, Chris W. Leitz, Gianni Taraschi, Minjoo L. Lee, Arthur Pitera, Judy L. Hoyt, Dimitri A. Antoniadis, Eugene A. Fitzgerald

Research output: Contribution to journalConference articlepeer-review


We have fabricated high quality SGOI substrates and demonstrated high mobility enhancement in strained-Si MOSFET's fabricated on the relaxed SGOI substrates with a Ge content of 25%. The substrates were fabricated by wafer bonding. The initial relaxed Si1-xGex layers were grown on Si donor substrates by a graded epitaxial growth technology using ultrahigh vacuum chemical vapor deposition (UHVCVD). The SiGe wafers were then bonded to oxidized silicon handle wafers. Two different approaches have been developed to fabricate SGOI substrates: an etch-back process utilizing a 20% Ge layer as a natural etch stop, and a hydrogen-induced wafer delamination process using H+ implantion. The resultant SiGe film quality was compared among the different approaches. Large-area strained-Si MOSFET's were then fabricated on the SGOI substrates. Epitaxial regrowth was used to produce the upper portion of the relaxed SiGe and the surface strained Si layer. The measured electron mobility shows significant enhancement over both the universal mobility and that of co-processed bulk-Si MOSFET's. This SGOI process has a low thermal budget and thus is compatible with a wide range of Ge contents in Si1-xGex layer.

Original languageEnglish (US)
Pages (from-to)21-26
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
StatePublished - 2002
Externally publishedYes
EventMaterials Issues in Novel Si-Based Technology - Boston, MA, United States
Duration: Nov 26 2001Nov 28 2001

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


Dive into the research topics of 'Relaxed silicon-germanium on insulator (SGOI)'. Together they form a unique fingerprint.

Cite this