Relative intensity noise of a quantum well transistor laser

F. Tan, R. Bambery, M. Feng, N. Holonyak

Research output: Contribution to journalArticle

Abstract

A quantum well transistor laser with a base cavity length L 300 μm has been designed, fabricated, and operated at threshold I TH 25 mA (0 °C). As a consequence of the inherent advantage of the picosecond base recombination lifetime, the transistor laser is able to achieve nearly a quantum shot-noise limited laser relative intensity noise (RIN) with a peak amplitude of -151 dB/Hz at frequency 8.6 GHz. Compared with a diode laser (a charge storage device) at the same output power, the transistor laser (a charge flow device) has a better than 28 dB (number dependent on the laser device design) peak RIN advantage.

Original languageEnglish (US)
Article number151118
JournalApplied Physics Letters
Volume101
Issue number15
DOIs
StatePublished - Oct 8 2012

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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