Abstract
A quantum well transistor laser with a base cavity length L 300 μm has been designed, fabricated, and operated at threshold ITH 25 mA (0 °C). As a consequence of the inherent advantage of the picosecond base recombination lifetime, the transistor laser is able to achieve nearly a quantum shot-noise limited laser relative intensity noise (RIN) with a peak amplitude of -151 dB/Hz at frequency 8.6 GHz. Compared with a diode laser (a charge storage device) at the same output power, the transistor laser (a charge flow device) has a better than 28 dB (number dependent on the laser device design) peak RIN advantage.
Original language | English (US) |
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Article number | 151118 |
Journal | Applied Physics Letters |
Volume | 101 |
Issue number | 15 |
DOIs | |
State | Published - Oct 8 2012 |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)