Relationship between planar GaAs nanowire growth direction and substrate orientation

Ryan S. Dowdy, Donald A. Walko, Xiuling Li

Research output: Contribution to journalArticle

Abstract

Planar GaAs nanowires are epitaxially grown on GaAs substrates of various orientations, via the Au-catalyzed vapor-liquid-solid mechanism using metal organic chemical vapor deposition. The nanowire geometry and growth direction are examined using scanning electron microscopy and x-ray microdiffraction. A hypothesis relating the planar nanowire growth direction to the surface projections of 111 B crystal directions is proposed. GaAs planar nanowire growth on vicinal substrates is performed to test this hypothesis. Good agreement between the experimental results and the projection model is found.

Original languageEnglish (US)
Article number035304
JournalNanotechnology
Volume24
Issue number3
DOIs
StatePublished - Jan 25 2013

Fingerprint

Nanowires
Substrates
Organic Chemicals
Organic chemicals
Chemical vapor deposition
Metals
Vapors
X rays
Crystals
Scanning electron microscopy
Geometry
Direction compound
gallium arsenide
Liquids

ASJC Scopus subject areas

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering
  • Electrical and Electronic Engineering

Cite this

Relationship between planar GaAs nanowire growth direction and substrate orientation. / Dowdy, Ryan S.; Walko, Donald A.; Li, Xiuling.

In: Nanotechnology, Vol. 24, No. 3, 035304, 25.01.2013.

Research output: Contribution to journalArticle

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