Relation between oxide degradation and oxide breakdown

C. Felsch, Elyse Rosenbaum

Research output: Contribution to journalArticle

Abstract

A novel oxide stressing procedure is used to determine the relation between oxide degradation and oxide breakdown. Results suggest that the mechanism of oxide breakdown depends on the oxide thickness. In 5 and 7 nm oxides, electron trap generation correlates with oxide breakdown. In 10 nm oxide, positive charge trapping correlates with oxide breakdown.

Original languageEnglish (US)
Pages (from-to)142-148
Number of pages7
JournalAnnual Proceedings - Reliability Physics (Symposium)
StatePublished - 1995

Fingerprint

Degradation
Oxides
Electron traps
Charge trapping

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Safety, Risk, Reliability and Quality

Cite this

Relation between oxide degradation and oxide breakdown. / Felsch, C.; Rosenbaum, Elyse.

In: Annual Proceedings - Reliability Physics (Symposium), 1995, p. 142-148.

Research output: Contribution to journalArticle

@article{f558e32e4103485fa8acd5bc3b0b6a71,
title = "Relation between oxide degradation and oxide breakdown",
abstract = "A novel oxide stressing procedure is used to determine the relation between oxide degradation and oxide breakdown. Results suggest that the mechanism of oxide breakdown depends on the oxide thickness. In 5 and 7 nm oxides, electron trap generation correlates with oxide breakdown. In 10 nm oxide, positive charge trapping correlates with oxide breakdown.",
author = "C. Felsch and Elyse Rosenbaum",
year = "1995",
language = "English (US)",
pages = "142--148",
journal = "Annual Proceedings - Reliability Physics (Symposium)",
issn = "0099-9512",

}

TY - JOUR

T1 - Relation between oxide degradation and oxide breakdown

AU - Felsch, C.

AU - Rosenbaum, Elyse

PY - 1995

Y1 - 1995

N2 - A novel oxide stressing procedure is used to determine the relation between oxide degradation and oxide breakdown. Results suggest that the mechanism of oxide breakdown depends on the oxide thickness. In 5 and 7 nm oxides, electron trap generation correlates with oxide breakdown. In 10 nm oxide, positive charge trapping correlates with oxide breakdown.

AB - A novel oxide stressing procedure is used to determine the relation between oxide degradation and oxide breakdown. Results suggest that the mechanism of oxide breakdown depends on the oxide thickness. In 5 and 7 nm oxides, electron trap generation correlates with oxide breakdown. In 10 nm oxide, positive charge trapping correlates with oxide breakdown.

UR - http://www.scopus.com/inward/record.url?scp=0029212368&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0029212368&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0029212368

SP - 142

EP - 148

JO - Annual Proceedings - Reliability Physics (Symposium)

JF - Annual Proceedings - Reliability Physics (Symposium)

SN - 0099-9512

ER -