Abstract
A novel oxide stressing procedure is used to determine the relation between oxide degradation and oxide breakdown. Results suggest that the mechanism of oxide breakdown depends on the oxide thickness. In 5 and 7 nm oxides, electron trap generation correlates with oxide breakdown. In 10 nm oxide, positive charge trapping correlates with oxide breakdown.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 142-148 |
| Number of pages | 7 |
| Journal | Annual Proceedings - Reliability Physics (Symposium) |
| DOIs | |
| State | Published - 1995 |
| Event | Proceedings of the 33rd Annual 1995 IEEE International Reliability Physics Proceedings - Las Vegas, NV, USA Duration: Apr 4 1995 → Apr 6 1995 |
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Safety, Risk, Reliability and Quality