Relation between microstructure and electronic properties of magnetron sputtered a-Si1-x,Cx:H

S. Y. Yang, N. Maley, J. R. Abelson

Research output: Chapter in Book/Report/Conference proceedingConference contribution


We have grown a-Si1-x,Cx:H films by reactive magnetron sputtering, varying the H2 partial pressure from 0 to 6 mTorr and maintaining the substrate temperature at 275 °C and argon and methane partial pressures at 1.70 and 0.10 mTorr, respectively. We investigate the correlation between electronic properties and the fraction of H bonded in `microstructure,' defined by the ratio of SiHx stretching mode absorptions in IR and the low temperature H2 release in thermal evolution. Our results on sputtered films disprove the monotonic decrease in carrier transport with increasing microstructure fraction which is commonly observed for a-Si1-xCx:H grown by glow discharge of SiH4 and CH4. We find that the electronic properties and microstructure depend on film composition and growth technique, and that the electronic properties are not uniquely determined by the microstructure of hydrogen bonding.

Original languageEnglish (US)
Title of host publicationAmorphous Silicon Technology
PublisherPubl by Materials Research Society
Number of pages6
ISBN (Print)155899193X, 9781558991934
StatePublished - 1993
EventProceedings of the MRS Spring Meeting - San Francisco, CA, USA
Duration: Apr 13 1993Apr 16 1993

Publication series

NameMaterials Research Society Symposium Proceedings
ISSN (Print)0272-9172


OtherProceedings of the MRS Spring Meeting
CitySan Francisco, CA, USA

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


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