TY - GEN
T1 - Relation between microstructure and electronic properties of magnetron sputtered a-Si1-x,Cx:H
AU - Yang, S. Y.
AU - Maley, N.
AU - Abelson, J. R.
PY - 1993
Y1 - 1993
N2 - We have grown a-Si1-x,Cx:H films by reactive magnetron sputtering, varying the H2 partial pressure from 0 to 6 mTorr and maintaining the substrate temperature at 275 °C and argon and methane partial pressures at 1.70 and 0.10 mTorr, respectively. We investigate the correlation between electronic properties and the fraction of H bonded in `microstructure,' defined by the ratio of SiHx stretching mode absorptions in IR and the low temperature H2 release in thermal evolution. Our results on sputtered films disprove the monotonic decrease in carrier transport with increasing microstructure fraction which is commonly observed for a-Si1-xCx:H grown by glow discharge of SiH4 and CH4. We find that the electronic properties and microstructure depend on film composition and growth technique, and that the electronic properties are not uniquely determined by the microstructure of hydrogen bonding.
AB - We have grown a-Si1-x,Cx:H films by reactive magnetron sputtering, varying the H2 partial pressure from 0 to 6 mTorr and maintaining the substrate temperature at 275 °C and argon and methane partial pressures at 1.70 and 0.10 mTorr, respectively. We investigate the correlation between electronic properties and the fraction of H bonded in `microstructure,' defined by the ratio of SiHx stretching mode absorptions in IR and the low temperature H2 release in thermal evolution. Our results on sputtered films disprove the monotonic decrease in carrier transport with increasing microstructure fraction which is commonly observed for a-Si1-xCx:H grown by glow discharge of SiH4 and CH4. We find that the electronic properties and microstructure depend on film composition and growth technique, and that the electronic properties are not uniquely determined by the microstructure of hydrogen bonding.
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U2 - 10.1557/proc-297-675
DO - 10.1557/proc-297-675
M3 - Conference contribution
AN - SCOPUS:0027805082
SN - 155899193X
SN - 9781558991934
T3 - Materials Research Society Symposium Proceedings
SP - 675
EP - 680
BT - Amorphous Silicon Technology
PB - Publ by Materials Research Society
T2 - Proceedings of the MRS Spring Meeting
Y2 - 13 April 1993 through 16 April 1993
ER -