Relation between microstructure and electronic properties of magnetron sputtered a-Si1-x,Cx:H

S. Y. Yang; N. Maley; J. R. Abelson

doi:10.1557/proc-297-675

Relation between microstructure and electronic properties of magnetron sputtered a-Si_1-x,C_x:H

S. Y. Yang, N. Maley, J. R. Abelson

Materials Science and Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

We have grown a-Si_1-x,C_x:H films by reactive magnetron sputtering, varying the H₂ partial pressure from 0 to 6 mTorr and maintaining the substrate temperature at 275 °C and argon and methane partial pressures at 1.70 and 0.10 mTorr, respectively. We investigate the correlation between electronic properties and the fraction of H bonded in `microstructure,' defined by the ratio of SiH_x stretching mode absorptions in IR and the low temperature H₂ release in thermal evolution. Our results on sputtered films disprove the monotonic decrease in carrier transport with increasing microstructure fraction which is commonly observed for a-Si_1-xC_x:H grown by glow discharge of SiH₄ and CH₄. We find that the electronic properties and microstructure depend on film composition and growth technique, and that the electronic properties are not uniquely determined by the microstructure of hydrogen bonding.

Original language	English (US)
Title of host publication	Amorphous Silicon Technology
Publisher	Publ by Materials Research Society
Pages	675-680
Number of pages	6
ISBN (Print)	155899193X, 9781558991934
DOIs	https://doi.org/10.1557/proc-297-675
State	Published - 1993
Event	Proceedings of the MRS Spring Meeting - San Francisco, CA, USA Duration: Apr 13 1993 → Apr 16 1993

Publication series

Name	Materials Research Society Symposium Proceedings
Volume	297
ISSN (Print)	0272-9172

Other

Other	Proceedings of the MRS Spring Meeting
City	San Francisco, CA, USA
Period	4/13/93 → 4/16/93

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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Yang, S. Y., Maley, N., & Abelson, J. R. (1993). Relation between microstructure and electronic properties of magnetron sputtered a-Si_1-x,C_x:H. In Amorphous Silicon Technology (pp. 675-680). (Materials Research Society Symposium Proceedings; Vol. 297). Publ by Materials Research Society. https://doi.org/10.1557/proc-297-675

Yang, SY, Maley, N & Abelson, JR 1993, Relation between microstructure and electronic properties of magnetron sputtered a-Si_1-x,C_x:H. in Amorphous Silicon Technology. Materials Research Society Symposium Proceedings, vol. 297, Publ by Materials Research Society, pp. 675-680, Proceedings of the MRS Spring Meeting, San Francisco, CA, USA, 4/13/93. https://doi.org/10.1557/proc-297-675

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abstract = "We have grown a-Si1-x,Cx:H films by reactive magnetron sputtering, varying the H2 partial pressure from 0 to 6 mTorr and maintaining the substrate temperature at 275 °C and argon and methane partial pressures at 1.70 and 0.10 mTorr, respectively. We investigate the correlation between electronic properties and the fraction of H bonded in `microstructure,' defined by the ratio of SiHx stretching mode absorptions in IR and the low temperature H2 release in thermal evolution. Our results on sputtered films disprove the monotonic decrease in carrier transport with increasing microstructure fraction which is commonly observed for a-Si1-xCx:H grown by glow discharge of SiH4 and CH4. We find that the electronic properties and microstructure depend on film composition and growth technique, and that the electronic properties are not uniquely determined by the microstructure of hydrogen bonding.",

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N2 - We have grown a-Si1-x,Cx:H films by reactive magnetron sputtering, varying the H2 partial pressure from 0 to 6 mTorr and maintaining the substrate temperature at 275 °C and argon and methane partial pressures at 1.70 and 0.10 mTorr, respectively. We investigate the correlation between electronic properties and the fraction of H bonded in `microstructure,' defined by the ratio of SiHx stretching mode absorptions in IR and the low temperature H2 release in thermal evolution. Our results on sputtered films disprove the monotonic decrease in carrier transport with increasing microstructure fraction which is commonly observed for a-Si1-xCx:H grown by glow discharge of SiH4 and CH4. We find that the electronic properties and microstructure depend on film composition and growth technique, and that the electronic properties are not uniquely determined by the microstructure of hydrogen bonding.

AB - We have grown a-Si1-x,Cx:H films by reactive magnetron sputtering, varying the H2 partial pressure from 0 to 6 mTorr and maintaining the substrate temperature at 275 °C and argon and methane partial pressures at 1.70 and 0.10 mTorr, respectively. We investigate the correlation between electronic properties and the fraction of H bonded in `microstructure,' defined by the ratio of SiHx stretching mode absorptions in IR and the low temperature H2 release in thermal evolution. Our results on sputtered films disprove the monotonic decrease in carrier transport with increasing microstructure fraction which is commonly observed for a-Si1-xCx:H grown by glow discharge of SiH4 and CH4. We find that the electronic properties and microstructure depend on film composition and growth technique, and that the electronic properties are not uniquely determined by the microstructure of hydrogen bonding.

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