Reflectivity of VUV-sensitive silicon photomultipliers in liquid Xenon

M. Wagenpfeil, T. Ziegler, J. Schneider, A. Fieguth, M. Murra, D. Schulte, L. Althueser, C. Huhmann, C. Weinheimer, T. Michel, G. Anton, G. Adhikari, S. Al kharusi, E. Angelico, I. J. Arnquist, I. Badhrees, J. Bane, D. Beck, V. Belov, T. BhattaA. Bolotnikov, P. A. Breur, J. P. Brodsky, E. Brown, T. Brunner, E. Caden, G. F. Cao, C. Chambers, B. Chana, S. A. Charlebois, D. Chernyak, M. Chiu, B. Cleveland, A. Craycraft, T. Daniels, L. Darroch, A. Der mesrobian-Kabakian, A. De, K. Deslandes, R. Devoe, M. L. Di vacri, M. J. Dolinski, J. Echevers, M. Elbeltagi, L. Fabris, D. Fairbank, W. Fairbank, J. Farine, S. Ferrara, S. Feyzbakhsh, G. Gallina, P. Gautam, G. Giacomini, C. Gingras, D. Goeldi, A. Gorham, R. Gornea, G. Gratta, E. V. Hansen, C. A. Hardy, K. Harouaka, M. Heffner, E. W. Hoppe, A. House, M. Hughes, A. Iverson, A. Jamil, M. Jewell, A. Karelin, L. J. Kaufman, R. Krücken, A. Kuchenkov, K. S. Kumar, Y. Lan, A. Larson, K. G. Leach, D. S. Leonard, G. Li, S. Li, Z. Li, C. Licciardi, R. Lindsay, R. Maclellan, P. Martel-Dion, N. Massacret, T. Mcelroy, M. Medina peregrina, B. Mong, D. C. Moore, K. Murray, J. Nattress, C. R. Natzke, R. J. Newby, F. Nolet, O. Nusair, J. C. Nzobadila ondze, K. Odgers, A. Odian, J. L. Orrell, G. S. Ortega, I. Ostrovskiy, C. T. Overman, S. Parent, A. Piepke, A. Pocar, J. F. Pratte, E. Raguzin, G. J. Ramonnye, H. Rasiwala, S. Rescia, F. Reti re, C. Richard, M. Richman, J. Ringuette, A. Robinson, T. Rossignol, P. C. Rowson, N. Roy, R. Saldanha, S. Sangiorgio, A. K. Soma, F. Spadoni, V. Stekhanov, T. Stiegler, M. Tarka, S. Thibado, A. Tidball, J. Todd, T. Totev, S. Triambak, R. Tsang, F. Vachon, V. Veeraraghavan, S. Viel, C. Vivo-Vilches, M. Walent, U. Wichoski, M. Worcester, S. X. Wu, Q. Xia, W. Yan, L. Yang, O. Zeldovich

Research output: Contribution to journalArticlepeer-review

Abstract

Silicon photomultipliers are regarded as a very promising technology for next-generation, cutting-edge detectors for low-background experiments in particle physics. This work presents systematic reflectivity studies of Silicon Photomultipliers (SiPM) and other samples in liquid xenon at vacuum ultraviolet (VUV) wavelengths. A dedicated setup at the University of Münster has been used that allows to acquire angle-resolved reflection measurements of various samples immersed in liquid xenon with 0.45 angular resolution. Four samples are investigated in this work: one Hamamatsu VUV4 SiPM, one FBK VUV-HD SiPM, one FBK wafer sample and one Large-Area Avalanche Photodiode (LA-APD) from EXO-200. The reflectivity is determined to be 25-36 % at an angle of incidence of 20 for the four samples and increases to up to 65 % at 70 for the LA-APD and the FBK samples. The Hamamatsu VUV4 SiPM shows a decline with increasing angle of incidence. The reflectivity results will be incorporated in upcoming light response simulations of the nEXO detector.

Original languageEnglish (US)
Article numberP08002
JournalJournal of Instrumentation
Volume16
Issue number8
DOIs
StatePublished - Aug 2021

Keywords

  • APDs
  • CCDs
  • CMOS imagers
  • EBCCDs
  • EMCCDs
  • etc)
  • G-APDs
  • Photon detectors for UV
  • Photon detectors for UV
  • Si-PMTs
  • visible and IR photons (solid-state)
  • visible and IR photons (solid-state)(PIN diodes

ASJC Scopus subject areas

  • Mathematical Physics
  • Instrumentation

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