The electrical characterization of P+/N junction diodes fabricated in selective epitaxial silicon isolation structures using a nitrided field oxide insulator is presented. The use of field oxide which was nitrided at 1100 °C for 60 min in an ammonia gas ambient in improving the sidewall material quality is demonstrated. Thermal stress was minimize due to the modification of the coefficient of expansion. The reverse saturation current density and the forward recombination current significantly decreased in the diodes isolated in nitrided oxide when compared to standard thermal field oxide isolated diodes.
|Original language||English (US)|
|Number of pages||5|
|Journal||Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures|
|State||Published - Mar 2000|
ASJC Scopus subject areas
- Condensed Matter Physics
- Electrical and Electronic Engineering