Reduction of sidewall defect induced leakage currents by the use of nitrided field oxides in silicon selective epitaxial growth isolation for advanced ultralarge scale integration

The electrical characterization of P+/N junction diodes fabricated in selective epitaxial silicon isolation structures using a nitrided field oxide insulator is presented. The use of field oxide which was nitrided at 1100 °C for 60 min in an ammonia gas ambient in improving the sidewall material quality is demonstrated. Thermal stress was minimize due to the modification of the coefficient of expansion. The reverse saturation current density and the forward recombination current significantly decreased in the diodes isolated in nitrided oxide when compared to standard thermal field oxide isolated diodes.