Abstract
We report experimental results that replacing hydrogen with deuterium during the final wafer sintering process greatly reduces hot electron degradation effects in metal oxide semiconductor transistors due to a new giant isotope effect. Transistor lifetime improvements by factors of 10-50 are observed. A plausible physical theory suggests that the benefits of deuterium use may be general and also applicable to other areas of semiconductor device processing and fabrication.
Original language | English (US) |
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Pages (from-to) | 2526-2528 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 68 |
Issue number | 18 |
DOIs | |
State | Published - 1996 |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)