We report experimental results that replacing hydrogen with deuterium during the final wafer sintering process greatly reduces hot electron degradation effects in metal oxide semiconductor transistors due to a new giant isotope effect. Transistor lifetime improvements by factors of 10-50 are observed. A plausible physical theory suggests that the benefits of deuterium use may be general and also applicable to other areas of semiconductor device processing and fabrication.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)