Reduction of hot electron degradation in metal oxide semiconductor transistors by deuterium processing

J. W. Lyding, K. Hess, I. C. Kizilyalli

Research output: Contribution to journalArticle

Abstract

We report experimental results that replacing hydrogen with deuterium during the final wafer sintering process greatly reduces hot electron degradation effects in metal oxide semiconductor transistors due to a new giant isotope effect. Transistor lifetime improvements by factors of 10-50 are observed. A plausible physical theory suggests that the benefits of deuterium use may be general and also applicable to other areas of semiconductor device processing and fabrication.

Original languageEnglish (US)
Pages (from-to)2526-2528
Number of pages3
JournalApplied Physics Letters
Volume68
Issue number18
DOIs
StatePublished - Dec 1 1996

Fingerprint

hot electrons
metal oxide semiconductors
deuterium
transistors
degradation
semiconductor devices
isotope effect
sintering
wafers
life (durability)
fabrication
hydrogen

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Reduction of hot electron degradation in metal oxide semiconductor transistors by deuterium processing. / Lyding, J. W.; Hess, K.; Kizilyalli, I. C.

In: Applied Physics Letters, Vol. 68, No. 18, 01.12.1996, p. 2526-2528.

Research output: Contribution to journalArticle

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