Reduction of hot electron degradation in metal oxide semiconductor transistors by deuterium processing

J. W. Lyding, K. Hess, I. C. Kizilyalli

Research output: Contribution to journalArticlepeer-review

Abstract

We report experimental results that replacing hydrogen with deuterium during the final wafer sintering process greatly reduces hot electron degradation effects in metal oxide semiconductor transistors due to a new giant isotope effect. Transistor lifetime improvements by factors of 10-50 are observed. A plausible physical theory suggests that the benefits of deuterium use may be general and also applicable to other areas of semiconductor device processing and fabrication.

Original languageEnglish (US)
Pages (from-to)2526-2528
Number of pages3
JournalApplied Physics Letters
Volume68
Issue number18
DOIs
StatePublished - 1996

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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