Reduction in the outdiffusion into epitaxial Ge grown on GaAs using a thin AlAs interlayer

A. L. Demirel, S. Strite, A. Agarwal, M. S. Unlue, D. S.L. Mui, A. Rockett, H. H. Morkoc

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A major obstacle to the realization of practical GaAs-Ge devices is the large amount of Ga diffusion at the Ge/GaAs interface which leads to uncontrolled p-type doping of the Ge. The authors compare Ge/GaAs(100) structures with similar structures incorporating a thin AlAs interlayer. The results indicate that a thin AlAs layer at the Ge/GaAs heterojunction suppresses Ga outdiffusion, leading to a reduced background carrier concentration in the epitaxial Ge and an improved performance in GaAs-Ge devices grown on GaAs substrates.

Original languageEnglish (US)
Title of host publicationInstitute of Physics Conference Series
PublisherPubl by IOP Publishing Ltd
Pages49-53
Number of pages5
ISBN (Print)0854984100
StatePublished - 1991
EventProceedings of the 18th International Symposium on Gallium Arsenide and Related Compounds - Seattle, WA, USA
Duration: Sep 9 1991Sep 12 1991

Publication series

NameInstitute of Physics Conference Series
Volume120
ISSN (Print)0951-3248

Other

OtherProceedings of the 18th International Symposium on Gallium Arsenide and Related Compounds
CitySeattle, WA, USA
Period9/9/919/12/91

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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