@inproceedings{add2bb34faa74fa8a1431eae0645f090,
title = "Reduction in the outdiffusion into epitaxial Ge grown on GaAs using a thin AlAs interlayer",
abstract = "A major obstacle to the realization of practical GaAs-Ge devices is the large amount of Ga diffusion at the Ge/GaAs interface which leads to uncontrolled p-type doping of the Ge. The authors compare Ge/GaAs(100) structures with similar structures incorporating a thin AlAs interlayer. The results indicate that a thin AlAs layer at the Ge/GaAs heterojunction suppresses Ga outdiffusion, leading to a reduced background carrier concentration in the epitaxial Ge and an improved performance in GaAs-Ge devices grown on GaAs substrates.",
author = "Demirel, {A. L.} and S. Strite and A. Agarwal and Unlue, {M. S.} and Mui, {D. S.L.} and A. Rockett and Morkoc, {H. H.}",
year = "1991",
language = "English (US)",
isbn = "0854984100",
series = "Institute of Physics Conference Series",
publisher = "Publ by IOP Publishing Ltd",
pages = "49--53",
booktitle = "Institute of Physics Conference Series",
note = "Proceedings of the 18th International Symposium on Gallium Arsenide and Related Compounds ; Conference date: 09-09-1991 Through 12-09-1991",
}