@inproceedings{171a51503d59494292b9231f02abed17,
title = "Reducing the dependence of threading dislocation density on doping for GaAsP/GaP on Si",
abstract = "We compare 1.7 eV GaAsP top cells grown on GaP/Si templates with different GaAsyP1-y/GaP buffer layer doping, either unintentionally-doped (UID) or Si-doped (n-type). Unlike our previous work showing 2.7× higher threading dislocation density (TDD) with n-type doping [1], we observed almost no change in TDD between GaAsP top cells grown on UID-buffers or n-buffers with our improved n-GaP buffer design. Similar GaAsP top cell device performance was achieved on UID- and n-buffers with AM1.5G efficiencies of 16.82\% and 16.35\%, respectively, despite TDD approaching 1×107 cm-2.",
keywords = "EBIC, MBE, TDD, doping, epitaxial III-V/Si integration, metamorphic growth",
author = "Hool, \{Ryan D.\} and Li, \{Brian D.\} and Yukun Sun and Pankul Dhingra and Tham, \{Rachel W.\} and Shizhao Fan and Lee, \{Minjoo Larry\}",
note = "We gratefully acknowledge funding from NSF CBET (Grant No. 1736181). R.D.H. and B.D.L were supported by NASA Space Technology Research Fellowships (Grants No. 80NSSC18K1171 and 80NSSC19K1174). P.D. was supported by DOE SETO (Grant No. DE-EE0008545).; 48th IEEE Photovoltaic Specialists Conference, PVSC 2021 ; Conference date: 20-06-2021 Through 25-06-2021",
year = "2021",
month = jun,
day = "20",
doi = "10.1109/PVSC43889.2021.9519041",
language = "English (US)",
series = "Conference Record of the IEEE Photovoltaic Specialists Conference",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "666--668",
booktitle = "2021 IEEE 48th Photovoltaic Specialists Conference, PVSC 2021",
address = "United States",
}