Reducing LER using a grazing incidence ion beam

C. R.M. Struck, R. Raju, M. J. Neumann, David N Ruzic

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

As semiconductor feature sizes and pitches shrink to ever-decreasing dimensions, Line Edge Roughness (LER) becomes and increasing important problem 1. The LER is transferred from the photoresist to the substrate through the subsequent processing steps, causing variations in, eg, gate length. This leads to mismatch in device performance and leakage 2. Thus, an efficient and cost effective way to reduce the LER in the semiconductor photoresist is needed in order to keep the imperfections from affecting processing steps further down the line. At the CPMI a new technique to reduce LER from patterened photoresist has been developed in conjunction with INTEL.Results obtained using our technique showed significant LER reduction from 6.9±0.47 nm to 3.9±0.61 nm for 45 nm lines and spaces. Recent results on 40 nm lines and spaces showed significant LER reduction from 5.9±0.50 nm to 4.1±0.63nm. LER reduction results on 40 nm lines and spaces reveal the fact that our technique is superior to other available techniques such as etching, vapor smoothing, hardbake, ozonation and rinse 3.

Original languageEnglish (US)
Title of host publicationAdvances in Resist Materials and Processing Technology XXVI
DOIs
StatePublished - May 29 2009
EventAdvances in Resist Materials and Processing Technology XXVI - San Jose, CA, United States
Duration: Feb 23 2009Feb 25 2009

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume7273
ISSN (Print)0277-786X

Other

OtherAdvances in Resist Materials and Processing Technology XXVI
CountryUnited States
CitySan Jose, CA
Period2/23/092/25/09

Keywords

  • EUV lithography
  • Ion beam
  • Line edge roughness
  • Photoresist

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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  • Cite this

    Struck, C. R. M., Raju, R., Neumann, M. J., & Ruzic, D. N. (2009). Reducing LER using a grazing incidence ion beam. In Advances in Resist Materials and Processing Technology XXVI [727346] (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 7273). https://doi.org/10.1117/12.814263