Reducing LER using a grazing incidence ion beam

C. R.M. Struck, R. Raju, M. J. Neumann, David N Ruzic

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

As semiconductor feature sizes and pitches shrink to ever-decreasing dimensions, Line Edge Roughness (LER) becomes and increasing important problem 1. The LER is transferred from the photoresist to the substrate through the subsequent processing steps, causing variations in, eg, gate length. This leads to mismatch in device performance and leakage 2. Thus, an efficient and cost effective way to reduce the LER in the semiconductor photoresist is needed in order to keep the imperfections from affecting processing steps further down the line. At the CPMI a new technique to reduce LER from patterened photoresist has been developed in conjunction with INTEL.Results obtained using our technique showed significant LER reduction from 6.9±0.47 nm to 3.9±0.61 nm for 45 nm lines and spaces. Recent results on 40 nm lines and spaces showed significant LER reduction from 5.9±0.50 nm to 4.1±0.63nm. LER reduction results on 40 nm lines and spaces reveal the fact that our technique is superior to other available techniques such as etching, vapor smoothing, hardbake, ozonation and rinse 3.

Original languageEnglish (US)
Title of host publicationAdvances in Resist Materials and Processing Technology XXVI
DOIs
StatePublished - May 29 2009
EventAdvances in Resist Materials and Processing Technology XXVI - San Jose, CA, United States
Duration: Feb 23 2009Feb 25 2009

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume7273
ISSN (Print)0277-786X

Other

OtherAdvances in Resist Materials and Processing Technology XXVI
CountryUnited States
CitySan Jose, CA
Period2/23/092/25/09

Fingerprint

grazing incidence
Roughness
Ion beams
Incidence
roughness
Surface roughness
ion beams
Line
Photoresists
photoresists
Photoresist
Semiconductor materials
Ozonization
Semiconductors
Processing
smoothing
Etching
leakage
Vapors
etching

Keywords

  • EUV lithography
  • Ion beam
  • Line edge roughness
  • Photoresist

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

Cite this

Struck, C. R. M., Raju, R., Neumann, M. J., & Ruzic, D. N. (2009). Reducing LER using a grazing incidence ion beam. In Advances in Resist Materials and Processing Technology XXVI [727346] (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 7273). https://doi.org/10.1117/12.814263

Reducing LER using a grazing incidence ion beam. / Struck, C. R.M.; Raju, R.; Neumann, M. J.; Ruzic, David N.

Advances in Resist Materials and Processing Technology XXVI. 2009. 727346 (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 7273).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Struck, CRM, Raju, R, Neumann, MJ & Ruzic, DN 2009, Reducing LER using a grazing incidence ion beam. in Advances in Resist Materials and Processing Technology XXVI., 727346, Proceedings of SPIE - The International Society for Optical Engineering, vol. 7273, Advances in Resist Materials and Processing Technology XXVI, San Jose, CA, United States, 2/23/09. https://doi.org/10.1117/12.814263
Struck CRM, Raju R, Neumann MJ, Ruzic DN. Reducing LER using a grazing incidence ion beam. In Advances in Resist Materials and Processing Technology XXVI. 2009. 727346. (Proceedings of SPIE - The International Society for Optical Engineering). https://doi.org/10.1117/12.814263
Struck, C. R.M. ; Raju, R. ; Neumann, M. J. ; Ruzic, David N. / Reducing LER using a grazing incidence ion beam. Advances in Resist Materials and Processing Technology XXVI. 2009. (Proceedings of SPIE - The International Society for Optical Engineering).
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