Reduced Staebler-Wronski effect in reactively sputtered hydrogenated amorphous silicon thin films

Mustafa Pinarbasi, John R. Abelson, Mark J. Kushner

Research output: Contribution to journalArticlepeer-review

Abstract

The kinetics of light-induced defect generation or the Staebler-Wronski effect (SWE) have been measured on device quality hydrogenated amorphous silicon (a-Si:H) films having hydrogen contents (CH) of ∼10-28 at. %. The films were deposited with direct current (dc) magnetron reactive sputtering. The low CH films have a density of defect states (DOS)∼7 to 10×1015 cm-3 which is three to five times higher than the high CH films. Under light exposure, the DOS for low C H films increases slower than that of the high CH or glow discharge produced films; in fact it is smaller after a few hours of light exposure. These measurements show that low CH dc magnetron reactively sputtered a-Si:H appears to be more stable material for sensitive applications such as solar cells.

Original languageEnglish (US)
Pages (from-to)1685-1687
Number of pages3
JournalApplied Physics Letters
Volume56
Issue number17
DOIs
StatePublished - 1990

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Fingerprint Dive into the research topics of 'Reduced Staebler-Wronski effect in reactively sputtered hydrogenated amorphous silicon thin films'. Together they form a unique fingerprint.

Cite this