Reduced Staebler-Wronski effect in reactively sputtered hydrogenated amorphous silicon thin films

Mustafa Pinarbasi; John R. Abelson; Mark J. Kushner

doi:10.1063/1.103117

Reduced Staebler-Wronski effect in reactively sputtered hydrogenated amorphous silicon thin films

Mustafa Pinarbasi, John R. Abelson, Mark J. Kushner

Research output: Contribution to journal › Article › peer-review

Abstract

The kinetics of light-induced defect generation or the Staebler-Wronski effect (SWE) have been measured on device quality hydrogenated amorphous silicon (a-Si:H) films having hydrogen contents (C_H) of ∼10-28 at. %. The films were deposited with direct current (dc) magnetron reactive sputtering. The low C_H films have a density of defect states (DOS)∼7 to 10×10¹⁵ cm^-3 which is three to five times higher than the high C_H films. Under light exposure, the DOS for low C _H films increases slower than that of the high C_H or glow discharge produced films; in fact it is smaller after a few hours of light exposure. These measurements show that low C_H dc magnetron reactively sputtered a-Si:H appears to be more stable material for sensitive applications such as solar cells.

Original language	English (US)
Pages (from-to)	1685-1687
Number of pages	3
Journal	Applied Physics Letters
Volume	56
Issue number	17
DOIs	https://doi.org/10.1063/1.103117
State	Published - 1990

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Physics and Astronomy (miscellaneous)

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10.1063/1.103117

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title = "Reduced Staebler-Wronski effect in reactively sputtered hydrogenated amorphous silicon thin films",

abstract = "The kinetics of light-induced defect generation or the Staebler-Wronski effect (SWE) have been measured on device quality hydrogenated amorphous silicon (a-Si:H) films having hydrogen contents (CH) of ∼10-28 at. %. The films were deposited with direct current (dc) magnetron reactive sputtering. The low CH films have a density of defect states (DOS)∼7 to 10×1015 cm-3 which is three to five times higher than the high CH films. Under light exposure, the DOS for low C H films increases slower than that of the high CH or glow discharge produced films; in fact it is smaller after a few hours of light exposure. These measurements show that low CH dc magnetron reactively sputtered a-Si:H appears to be more stable material for sensitive applications such as solar cells.",

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AU - Pinarbasi, Mustafa

AU - Abelson, John R.

AU - Kushner, Mark J.

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Y1 - 1990

N2 - The kinetics of light-induced defect generation or the Staebler-Wronski effect (SWE) have been measured on device quality hydrogenated amorphous silicon (a-Si:H) films having hydrogen contents (CH) of ∼10-28 at. %. The films were deposited with direct current (dc) magnetron reactive sputtering. The low CH films have a density of defect states (DOS)∼7 to 10×1015 cm-3 which is three to five times higher than the high CH films. Under light exposure, the DOS for low C H films increases slower than that of the high CH or glow discharge produced films; in fact it is smaller after a few hours of light exposure. These measurements show that low CH dc magnetron reactively sputtered a-Si:H appears to be more stable material for sensitive applications such as solar cells.

AB - The kinetics of light-induced defect generation or the Staebler-Wronski effect (SWE) have been measured on device quality hydrogenated amorphous silicon (a-Si:H) films having hydrogen contents (CH) of ∼10-28 at. %. The films were deposited with direct current (dc) magnetron reactive sputtering. The low CH films have a density of defect states (DOS)∼7 to 10×1015 cm-3 which is three to five times higher than the high CH films. Under light exposure, the DOS for low C H films increases slower than that of the high CH or glow discharge produced films; in fact it is smaller after a few hours of light exposure. These measurements show that low CH dc magnetron reactively sputtered a-Si:H appears to be more stable material for sensitive applications such as solar cells.

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Reduced Staebler-Wronski effect in reactively sputtered hydrogenated amorphous silicon thin films

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