The kinetics of light-induced defect generation or the Staebler-Wronski effect (SWE) have been measured on device quality hydrogenated amorphous silicon (a-Si:H) films having hydrogen contents (CH) of ∼10-28 at. %. The films were deposited with direct current (dc) magnetron reactive sputtering. The low CH films have a density of defect states (DOS)∼7 to 10×1015 cm-3 which is three to five times higher than the high CH films. Under light exposure, the DOS for low C H films increases slower than that of the high CH or glow discharge produced films; in fact it is smaller after a few hours of light exposure. These measurements show that low CH dc magnetron reactively sputtered a-Si:H appears to be more stable material for sensitive applications such as solar cells.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)