Reduced monomolecular recombination in GaInNAsSb/GaAs lasers at 1.5 μm

L. L. Goddard, S. R. Bank, M. A. Wistey, H. B. Yuen, H. P. Bae, J. S. Harris

Research output: Contribution to journalConference articlepeer-review

Abstract

We present 1.5μm CW GaInNAsSb/GaAs Iasers with typical room temperature threshold densities below 600A/cm 2, external efficiencies above 50% and output powers of 200mW. Z-parameter measurements show these improvements are primarily due to reduced monomolecular recombination.

Original languageEnglish (US)
Article numberMO6
Pages (from-to)144-145
Number of pages2
JournalConference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS
Volume1
StatePublished - Dec 1 2004
Externally publishedYes
Event2004 IEEE LEOS Annual Meeting Conference Proceedings, LEOS 2004 - Rio Grande, Puerto Rico
Duration: Nov 7 2004Nov 11 2004

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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