Abstract
We present 1.5μm CW GaInNAsSb/GaAs Iasers with typical room temperature threshold densities below 600A/cm 2, external efficiencies above 50% and output powers of 200mW. Z-parameter measurements show these improvements are primarily due to reduced monomolecular recombination.
Original language | English (US) |
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Article number | MO6 |
Pages (from-to) | 144-145 |
Number of pages | 2 |
Journal | Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS |
Volume | 1 |
State | Published - 2004 |
Externally published | Yes |
Event | 2004 IEEE LEOS Annual Meeting Conference Proceedings, LEOS 2004 - Rio Grande, Puerto Rico Duration: Nov 7 2004 → Nov 11 2004 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering