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Redistribution of manganese after annealing of GaAs implanted with Si
+
and Se
+
H. Kanber,
M. Feng
, J. M. Whelan
Research output
:
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›
Article
›
peer-review
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Dive into the research topics of 'Redistribution of manganese after annealing of GaAs implanted with Si
+
and Se
+
'. Together they form a unique fingerprint.
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Keyphrases
Annealing
100%
Gallium Arsenide
100%
Manganese
100%
Secondary Ion Mass Spectrometry
33%
Silica
33%
P-type
33%
Diffusion Mechanism
33%
Diffusion Rate
33%
Peak Position
33%
Annealing Temperature
33%
GaAs Substrate
33%
High Solids
33%
Surface Zone
33%
Solid Solubility
33%
H2 Atmosphere
33%
GaAs Surface
33%
Implantation Energy
33%
Semi-insulating GaAs
33%
Cr Doping
33%
Gettering
33%
Type Conversion
33%
Mn Diffusion
33%
Chemistry
Manganese
100%
Implant
100%
Secondary Ion Mass Spectroscopy
50%
Solid Solubility
50%
Encapsulant
50%
Gettering
50%
Engineering
Gallium Arsenide
100%
Energy Engineering
50%
Implant
50%
Diffusion Mechanism
25%
Annealing Temperature
25%
Gaas Substrate
25%
Klein
25%
Surface Region
25%
Solid Solubility
25%
Material Science
Annealing
100%
Gallium Arsenide
100%
Manganese
100%
Secondary Ion Mass Spectrometry
20%
Gettering
20%
Chemical Engineering
Secondary Ion Mass Spectrometry
100%