Redistribution of manganese after annealing of GaAs implanted with Si + and Se+

H. Kanber; M. Feng; J. M. Whelan

doi:10.1063/1.92967

Redistribution of manganese after annealing of GaAs implanted with Si ⁺ and Se⁺

H. Kanber, M. Feng, J. M. Whelan

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Abstract

The redistribution of Mn in Si⁺ and Se⁺ implanted Cr-doped semi-insulating GaAs substrates is studied by secondary-ion mass spectrometry as a function of implant dose, energy, and annealing temperature subsequent to annealing capless and with a SiO₂ cap in a As ₄-H₂ atmosphere. Mn accumulates within a depth of 0.5 μm from the GaAs surface with a peak at ∼500 Å from the surface for capless anneals. The Mn peak position is constant as the implant energy is varied. The role of the encapsulant in gettering Mn is described. The observed accumulation of Mn near the surface region of GaAs can cause p-type conversion of this region as reported by Klein. A higher solid solubility (≊ 3×10¹⁸ atoms/cm³) and a higher diffusion rate of Mn than of Cr in GaAs at 900°C are indicated by the dose study. A preliminary model for the Mn diffusion mechanism under the above conditions is proposed.

Original language	English (US)
Pages (from-to)	960-962
Number of pages	3
Journal	Applied Physics Letters
Volume	40
Issue number	11
DOIs	https://doi.org/10.1063/1.92967
State	Published - 1982
Externally published	Yes

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Physics and Astronomy (miscellaneous)

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@article{1a12818f81cb43279c8cf38ab6601cb2,

title = "Redistribution of manganese after annealing of GaAs implanted with Si + and Se+",

abstract = "The redistribution of Mn in Si+ and Se+ implanted Cr-doped semi-insulating GaAs substrates is studied by secondary-ion mass spectrometry as a function of implant dose, energy, and annealing temperature subsequent to annealing capless and with a SiO2 cap in a As 4-H2 atmosphere. Mn accumulates within a depth of 0.5 μm from the GaAs surface with a peak at ∼500 {\AA} from the surface for capless anneals. The Mn peak position is constant as the implant energy is varied. The role of the encapsulant in gettering Mn is described. The observed accumulation of Mn near the surface region of GaAs can cause p-type conversion of this region as reported by Klein. A higher solid solubility (≊ 3×1018 atoms/cm3) and a higher diffusion rate of Mn than of Cr in GaAs at 900°C are indicated by the dose study. A preliminary model for the Mn diffusion mechanism under the above conditions is proposed.",

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T1 - Redistribution of manganese after annealing of GaAs implanted with Si + and Se+

AU - Kanber, H.

AU - Feng, M.

AU - Whelan, J. M.

PY - 1982

Y1 - 1982

N2 - The redistribution of Mn in Si+ and Se+ implanted Cr-doped semi-insulating GaAs substrates is studied by secondary-ion mass spectrometry as a function of implant dose, energy, and annealing temperature subsequent to annealing capless and with a SiO2 cap in a As 4-H2 atmosphere. Mn accumulates within a depth of 0.5 μm from the GaAs surface with a peak at ∼500 Å from the surface for capless anneals. The Mn peak position is constant as the implant energy is varied. The role of the encapsulant in gettering Mn is described. The observed accumulation of Mn near the surface region of GaAs can cause p-type conversion of this region as reported by Klein. A higher solid solubility (≊ 3×1018 atoms/cm3) and a higher diffusion rate of Mn than of Cr in GaAs at 900°C are indicated by the dose study. A preliminary model for the Mn diffusion mechanism under the above conditions is proposed.

AB - The redistribution of Mn in Si+ and Se+ implanted Cr-doped semi-insulating GaAs substrates is studied by secondary-ion mass spectrometry as a function of implant dose, energy, and annealing temperature subsequent to annealing capless and with a SiO2 cap in a As 4-H2 atmosphere. Mn accumulates within a depth of 0.5 μm from the GaAs surface with a peak at ∼500 Å from the surface for capless anneals. The Mn peak position is constant as the implant energy is varied. The role of the encapsulant in gettering Mn is described. The observed accumulation of Mn near the surface region of GaAs can cause p-type conversion of this region as reported by Klein. A higher solid solubility (≊ 3×1018 atoms/cm3) and a higher diffusion rate of Mn than of Cr in GaAs at 900°C are indicated by the dose study. A preliminary model for the Mn diffusion mechanism under the above conditions is proposed.

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