Red shifting the intersubband response of quantum-well infrared photodetectors by thermal annealing

J. I. Malin; P. Liu; D. K. Sengupta; W. C. Fang; S. L. Chuang; M. Feng; G. E. Stillman; K. C. Hsieh

doi:10.1063/1.363456

Red shifting the intersubband response of quantum-well infrared photodetectors by thermal annealing

J. I. Malin, P. Liu, D. K. Sengupta, W. C. Fang, S. L. Chuang, M. Feng, G. E. Stillman, K. C. Hsieh

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

Selectively red shifting the photoresponse of intersubband GaAs/Al_0.25Ga_0.75As multiple-quantum-well (MQW) infrared photodetectors (QWIPs) by furnace and rapid thermal annealing is explored. Selective interdiffusion of the MQW is achieved by dielectric encapsulating (SiO₂ or Si₃N₄) the surface. The high dark current of annealed QWIPs is attributed to dopant out-diffusion from the QWs into the barriers. Declining responsivities result from reduced carrier density in the QW and a red shift of the intersubband transition energy. In this work, the intersubband energy is determined by the Fourier synthesis model and compared with experimental results (further confirming the intentiffusion mechanism). Minimal dark current and responsivity degradation is observed for Si₃N₄-encapsulated QWIPs red shifted by 1 μm

Original language	English (US)
Pages (from-to)	4737-4740
Number of pages	4
Journal	Journal of Applied Physics
Volume	80
Issue number	8
DOIs	https://doi.org/10.1063/1.363456
State	Published - Oct 15 1996

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General Physics and Astronomy

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title = "Red shifting the intersubband response of quantum-well infrared photodetectors by thermal annealing",

abstract = "Selectively red shifting the photoresponse of intersubband GaAs/Al0.25Ga0.75As multiple-quantum-well (MQW) infrared photodetectors (QWIPs) by furnace and rapid thermal annealing is explored. Selective interdiffusion of the MQW is achieved by dielectric encapsulating (SiO2 or Si3N4) the surface. The high dark current of annealed QWIPs is attributed to dopant out-diffusion from the QWs into the barriers. Declining responsivities result from reduced carrier density in the QW and a red shift of the intersubband transition energy. In this work, the intersubband energy is determined by the Fourier synthesis model and compared with experimental results (further confirming the intentiffusion mechanism). Minimal dark current and responsivity degradation is observed for Si3N4-encapsulated QWIPs red shifted by 1 μm",

author = "Malin, {J. I.} and P. Liu and Sengupta, {D. K.} and Fang, {W. C.} and Chuang, {S. L.} and M. Feng and Stillman, {G. E.} and Hsieh, {K. C.}",

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doi = "10.1063/1.363456",

language = "English (US)",

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T1 - Red shifting the intersubband response of quantum-well infrared photodetectors by thermal annealing

AU - Malin, J. I.

AU - Liu, P.

AU - Sengupta, D. K.

AU - Fang, W. C.

AU - Chuang, S. L.

AU - Feng, M.

AU - Stillman, G. E.

AU - Hsieh, K. C.

PY - 1996/10/15

Y1 - 1996/10/15

N2 - Selectively red shifting the photoresponse of intersubband GaAs/Al0.25Ga0.75As multiple-quantum-well (MQW) infrared photodetectors (QWIPs) by furnace and rapid thermal annealing is explored. Selective interdiffusion of the MQW is achieved by dielectric encapsulating (SiO2 or Si3N4) the surface. The high dark current of annealed QWIPs is attributed to dopant out-diffusion from the QWs into the barriers. Declining responsivities result from reduced carrier density in the QW and a red shift of the intersubband transition energy. In this work, the intersubband energy is determined by the Fourier synthesis model and compared with experimental results (further confirming the intentiffusion mechanism). Minimal dark current and responsivity degradation is observed for Si3N4-encapsulated QWIPs red shifted by 1 μm

AB - Selectively red shifting the photoresponse of intersubband GaAs/Al0.25Ga0.75As multiple-quantum-well (MQW) infrared photodetectors (QWIPs) by furnace and rapid thermal annealing is explored. Selective interdiffusion of the MQW is achieved by dielectric encapsulating (SiO2 or Si3N4) the surface. The high dark current of annealed QWIPs is attributed to dopant out-diffusion from the QWs into the barriers. Declining responsivities result from reduced carrier density in the QW and a red shift of the intersubband transition energy. In this work, the intersubband energy is determined by the Fourier synthesis model and compared with experimental results (further confirming the intentiffusion mechanism). Minimal dark current and responsivity degradation is observed for Si3N4-encapsulated QWIPs red shifted by 1 μm

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Red shifting the intersubband response of quantum-well infrared photodetectors by thermal annealing

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