Red and Near-Infrared III-Nitride Quantum Dot Lasers

InGaN/GaN self-organized quantum dots and similar dots in GaN nanowires are formed by strain relaxation and the luminescence from these nanostructures extends to longer wavelengths than generally obtained with quantum wells. We have exploited this advantage by incorporating these nanostructures in the gain region of edge-emitting diode lasers. Here, we describe the characteristics of 650 nm self-organized quantum dot lasers epitaxially grown on GaN and 1.3 μm dot-in-nanowire array lasers grown on (001) Si by molecular beam epitaxy. The devices are characterized by relatively low threshold currents, excellent temperature stability (T₀ > 200 K), and differential gain ∼10^-16 cm². The highest measured small-signal modulation bandwidth of the dot-in-nanowire laser is 3.3 GHz. The experiments have been complemented by theoretical modeling of the self-organized quantum dots and lasers made with them. These new classes of devices open up new opportunities in applications such as displays, optical data storage, heads-up displays in automobiles, plastic fiber communication, and silicon photonics.