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Record high RF performance for epitaxial graphene transistors
Y. Q. Wu
, D. B. Farmer
, A. Valdes-Garcia
,
W. J. Zhu
, K. A. Jenkins
, C. Dimitrakopoulos
, Ph Avouris
, Y. M. Lin
Research output
:
Chapter in Book/Report/Conference proceeding
›
Conference contribution
Overview
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Keyphrases
Graphene Transistor
100%
Graphene FET
100%
Epitaxial Graphene
100%
High RF Performances
100%
Gate Dielectric
50%
Graphene
50%
Device Dimensions
50%
Power Gain
50%
Transconductance
50%
Cut-off Frequency
50%
T-ratio
50%
Forward Power
50%
High Voltage Gain
50%
S-21
50%
High Output Current
50%
Engineering
Graphene
100%
Field Effect Transistor
100%
Epitaxial Graphene
100%
Gate Dielectric
50%
Cutoff Frequency
50%
Current Output
50%
Max
50%
Power Gain
50%
Forward Power
50%
Material Science
Transistor
100%
Graphene
100%
Field Effect Transistor
50%
Dielectric Material
25%