@inproceedings{cc090ece6e664e68afddc72043a0d2f5,
title = "Record high RF performance for epitaxial graphene transistors",
abstract = "By optimizing of the gate dielectrics and device dimensions, we achieve a record high output current and transconductance of 5 mA/μm and 2 mS/μm in epitaxial graphene FETs. A cut-off frequency of 280 GHz is achieved for a 40-nm graphene FET, the highest so far on any synthesized graphene. Also, highest voltage gain of 10 dB has been achieved, with an f max/f T ratio larger than 1 demonstrated consistently on different devices. For the first time, forward power gain |S 21|>1 delivered into a 50-Ω load is demonstrated.",
author = "Wu, {Y. Q.} and Farmer, {D. B.} and A. Valdes-Garcia and Zhu, {W. J.} and Jenkins, {K. A.} and C. Dimitrakopoulos and Ph Avouris and Lin, {Y. M.}",
year = "2011",
doi = "10.1109/IEDM.2011.6131601",
language = "English (US)",
isbn = "9781457705052",
series = "Technical Digest - International Electron Devices Meeting, IEDM",
pages = "23.8.1--23.8.3",
booktitle = "2011 International Electron Devices Meeting, IEDM 2011",
note = "2011 IEEE International Electron Devices Meeting, IEDM 2011 ; Conference date: 05-12-2011 Through 07-12-2011",
}