Record high RF performance for epitaxial graphene transistors

Y. Q. Wu, D. B. Farmer, A. Valdes-Garcia, W. J. Zhu, K. A. Jenkins, C. Dimitrakopoulos, Ph Avouris, Y. M. Lin

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

By optimizing of the gate dielectrics and device dimensions, we achieve a record high output current and transconductance of 5 mA/μm and 2 mS/μm in epitaxial graphene FETs. A cut-off frequency of 280 GHz is achieved for a 40-nm graphene FET, the highest so far on any synthesized graphene. Also, highest voltage gain of 10 dB has been achieved, with an f max/f T ratio larger than 1 demonstrated consistently on different devices. For the first time, forward power gain |S 21|>1 delivered into a 50-Ω load is demonstrated.

Original languageEnglish (US)
Title of host publication2011 International Electron Devices Meeting, IEDM 2011
Pages23.8.1-23.8.3
DOIs
StatePublished - Dec 1 2011
Externally publishedYes
Event2011 IEEE International Electron Devices Meeting, IEDM 2011 - Washington, DC, United States
Duration: Dec 5 2011Dec 7 2011

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)0163-1918

Other

Other2011 IEEE International Electron Devices Meeting, IEDM 2011
CountryUnited States
CityWashington, DC
Period12/5/1112/7/11

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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