Record fT and fT + fMAX performance of InP/InGaAs single heterojunction bipolar transistors

W. Hafez, J. W. Lai, Milton Feng

Research output: Contribution to journalArticle

Abstract

Record performance is reported for InP/InGaAs single heterojunction transistors. An fT of 382 GHz is reported on a 0.5 × 12 μm device, the highest for any bipolar device on any material system. Record fT + fMAX of 673 GHz was achieved on a 0.35 × 8 μm device.

Original languageEnglish (US)
Pages (from-to)811-813
Number of pages3
JournalElectronics Letters
Volume39
Issue number10
DOIs
StatePublished - May 15 2003

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ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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