Record performance is reported for InP/InGaAs single heterojunction transistors. An fT of 382 GHz is reported on a 0.5 × 12 μm device, the highest for any bipolar device on any material system. Record fT + fMAX of 673 GHz was achieved on a 0.35 × 8 μm device.
ASJC Scopus subject areas
- Electrical and Electronic Engineering