Reconfigurable 43 Gb/s optical link test based upon on-wafer probes of GaAs photodetectors and VCSELs up to 85°C

Yu Ting Peng; Junyi Qiu; Dufei Wu; Milton Feng

Reconfigurable 43 Gb/s optical link test based upon on-wafer probes of GaAs photodetectors and VCSELs up to 85°C

Yu Ting Peng, Junyi Qiu, Dufei Wu, Milton Feng

Electrical and Computer Engineering

Research output: Contribution to conference › Paper › peer-review

Abstract

Reconfigurable testing of a high-speed optical link based upon on-wafer probing of an oxide-confined 850 nm vertical-cavity surface-emitting laser (VCSEL) and a GaAs P-i-N photodetector (PD) is demonstrated at a non-return to zero (NRZ) modulated data rate up to 50 Gb/s at room temperature and 43 Gb/s at 85℃ over back-to-back distance. Without any impedance matching network, trans-impedance amplifier, or equalization technique present at the received side, the optical link has not only shown robustness but also achieved outstanding signal-to-noise ratios (SNRs) over the operating temperature range.

Original language	English (US)
State	Published - 2019
Event	2019 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2019 - Minneapolis, United States Duration: Apr 29 2019 → May 2 2019

Conference

Conference	2019 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2019
Country	United States
City	Minneapolis
Period	4/29/19 → 5/2/19

Keywords

High-speed modulation
On-wafer characterization
Optical fiber link

ASJC Scopus subject areas

Hardware and Architecture
Electrical and Electronic Engineering

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Reconfigurable 43 Gb/s optical link test based upon on-wafer probes of GaAs photodetectors and VCSELs up to 85°C. / Peng, Yu Ting; Qiu, Junyi; Wu, Dufei; Feng, Milton.

2019. Paper presented at 2019 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2019, Minneapolis, United States.

Research output: Contribution to conference › Paper › peer-review

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title = "Reconfigurable 43 Gb/s optical link test based upon on-wafer probes of GaAs photodetectors and VCSELs up to 85°C",

abstract = "Reconfigurable testing of a high-speed optical link based upon on-wafer probing of an oxide-confined 850 nm vertical-cavity surface-emitting laser (VCSEL) and a GaAs P-i-N photodetector (PD) is demonstrated at a non-return to zero (NRZ) modulated data rate up to 50 Gb/s at room temperature and 43 Gb/s at 85℃ over back-to-back distance. Without any impedance matching network, trans-impedance amplifier, or equalization technique present at the received side, the optical link has not only shown robustness but also achieved outstanding signal-to-noise ratios (SNRs) over the operating temperature range.",

keywords = "High-speed modulation, On-wafer characterization, Optical fiber link",

author = "Peng, {Yu Ting} and Junyi Qiu and Dufei Wu and Milton Feng",

note = "Funding Information: This project is also supported by the National Science Foundation under grant 1640196, and the Nanoelectronics Research Corporation (NERC), a wholly-owned subsidiary of the Semiconductor Research Corporation (SRC), through Electronic-Photonic Integration Using the Transistor Laser for Energy-Efficient Computing, a Nanoelectronics Research Initiative (SRC-NRI) under Research Task ID 2697.001-Transistor Laser Based Circuits and Devices. The authors would also like to thank Foxconn Interconnect Technology for research support.; 2019 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2019 ; Conference date: 29-04-2019 Through 02-05-2019",

year = "2019",

language = "English (US)",

}

TY - CONF

T1 - Reconfigurable 43 Gb/s optical link test based upon on-wafer probes of GaAs photodetectors and VCSELs up to 85°C

AU - Peng, Yu Ting

AU - Qiu, Junyi

AU - Wu, Dufei

AU - Feng, Milton

N1 - Funding Information: This project is also supported by the National Science Foundation under grant 1640196, and the Nanoelectronics Research Corporation (NERC), a wholly-owned subsidiary of the Semiconductor Research Corporation (SRC), through Electronic-Photonic Integration Using the Transistor Laser for Energy-Efficient Computing, a Nanoelectronics Research Initiative (SRC-NRI) under Research Task ID 2697.001-Transistor Laser Based Circuits and Devices. The authors would also like to thank Foxconn Interconnect Technology for research support.

PY - 2019

Y1 - 2019

N2 - Reconfigurable testing of a high-speed optical link based upon on-wafer probing of an oxide-confined 850 nm vertical-cavity surface-emitting laser (VCSEL) and a GaAs P-i-N photodetector (PD) is demonstrated at a non-return to zero (NRZ) modulated data rate up to 50 Gb/s at room temperature and 43 Gb/s at 85℃ over back-to-back distance. Without any impedance matching network, trans-impedance amplifier, or equalization technique present at the received side, the optical link has not only shown robustness but also achieved outstanding signal-to-noise ratios (SNRs) over the operating temperature range.

AB - Reconfigurable testing of a high-speed optical link based upon on-wafer probing of an oxide-confined 850 nm vertical-cavity surface-emitting laser (VCSEL) and a GaAs P-i-N photodetector (PD) is demonstrated at a non-return to zero (NRZ) modulated data rate up to 50 Gb/s at room temperature and 43 Gb/s at 85℃ over back-to-back distance. Without any impedance matching network, trans-impedance amplifier, or equalization technique present at the received side, the optical link has not only shown robustness but also achieved outstanding signal-to-noise ratios (SNRs) over the operating temperature range.

KW - High-speed modulation

KW - On-wafer characterization

KW - Optical fiber link

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T2 - 2019 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2019

Y2 - 29 April 2019 through 2 May 2019

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