Recombination energy changes due to shell-like defects in Si/SiO2 quantum dots

J. S. De Sousa, J. P. Leburton, V. N. Freire, E. F. Da Silva

Research output: Contribution to journalConference article

Abstract

The role of a shell-like interfacial layer on the ground state recombination energy of confined electron and holes in Si/SiO2 quantum dots was discussed. The depth of the interfacial confinement potential and nanocrystal diameter were also analyzed. The analysis showed that the dependence of the recombination energy on the quantum dot diameter was weakened by the presence of the interface defect.

Original languageEnglish (US)
Pages (from-to)73-76
Number of pages4
JournalPhysica E: Low-Dimensional Systems and Nanostructures
Volume17
Issue number1-4
DOIs
StatePublished - Apr 1 2003
EventProceedings pf the International Conference on Superlattices - ICSNN 2002 - Touluse, France
Duration: Jul 22 2002Jul 26 2002

Keywords

  • Interfacial layer
  • Quantum dots
  • Recombination energy

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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