Recombination energy changes due to shell-like defects in Si/SiO2 quantum dots

J. S. De Sousa; J. P. Leburton; V. N. Freire; E. F. Da Silva

doi:10.1016/S1386-9477(02)00776-2

Recombination energy changes due to shell-like defects in Si/SiO₂ quantum dots

J. S. De Sousa, J. P. Leburton, V. N. Freire, E. F. Da Silva

Electrical and Computer Engineering

Research output: Contribution to journal › Conference article › peer-review

Abstract

The role of a shell-like interfacial layer on the ground state recombination energy of confined electron and holes in Si/SiO₂ quantum dots was discussed. The depth of the interfacial confinement potential and nanocrystal diameter were also analyzed. The analysis showed that the dependence of the recombination energy on the quantum dot diameter was weakened by the presence of the interface defect.

Original language	English (US)
Pages (from-to)	73-76
Number of pages	4
Journal	Physica E: Low-Dimensional Systems and Nanostructures
Volume	17
Issue number	1-4
DOIs	https://doi.org/10.1016/S1386-9477(02)00776-2
State	Published - Apr 2003
Event	Proceedings pf the International Conference on Superlattices - ICSNN 2002 - Touluse, France Duration: Jul 22 2002 → Jul 26 2002

Keywords

Interfacial layer
Quantum dots
Recombination energy

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

Online availability

10.1016/S1386-9477(02)00776-2

Library availability

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Cite this

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title = "Recombination energy changes due to shell-like defects in Si/SiO2 quantum dots",

abstract = "The role of a shell-like interfacial layer on the ground state recombination energy of confined electron and holes in Si/SiO2 quantum dots was discussed. The depth of the interfacial confinement potential and nanocrystal diameter were also analyzed. The analysis showed that the dependence of the recombination energy on the quantum dot diameter was weakened by the presence of the interface defect.",

keywords = "Interfacial layer, Quantum dots, Recombination energy",

author = "{De Sousa}, {J. S.} and Leburton, {J. P.} and Freire, {V. N.} and {Da Silva}, {E. F.}",

note = "Funding Information: J.S. de Sousa is indebted to the Brazilian National Research Council (CNPq) for his fellowship during the development of this research. This work was also supported by the Beckman Institute for Advanced Science and Technology and the NSF Grant No. DESCARTES ECS-98-02730.; Proceedings pf the International Conference on Superlattices - ICSNN 2002 ; Conference date: 22-07-2002 Through 26-07-2002",

year = "2003",

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doi = "10.1016/S1386-9477(02)00776-2",

language = "English (US)",

volume = "17",

pages = "73--76",

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TY - JOUR

T1 - Recombination energy changes due to shell-like defects in Si/SiO2 quantum dots

AU - De Sousa, J. S.

AU - Leburton, J. P.

AU - Freire, V. N.

AU - Da Silva, E. F.

N1 - Funding Information: J.S. de Sousa is indebted to the Brazilian National Research Council (CNPq) for his fellowship during the development of this research. This work was also supported by the Beckman Institute for Advanced Science and Technology and the NSF Grant No. DESCARTES ECS-98-02730.

PY - 2003/4

Y1 - 2003/4

N2 - The role of a shell-like interfacial layer on the ground state recombination energy of confined electron and holes in Si/SiO2 quantum dots was discussed. The depth of the interfacial confinement potential and nanocrystal diameter were also analyzed. The analysis showed that the dependence of the recombination energy on the quantum dot diameter was weakened by the presence of the interface defect.

AB - The role of a shell-like interfacial layer on the ground state recombination energy of confined electron and holes in Si/SiO2 quantum dots was discussed. The depth of the interfacial confinement potential and nanocrystal diameter were also analyzed. The analysis showed that the dependence of the recombination energy on the quantum dot diameter was weakened by the presence of the interface defect.

KW - Interfacial layer

KW - Quantum dots

KW - Recombination energy

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SN - 1386-9477

VL - 17

SP - 73

EP - 76

JO - Physica E: Low-Dimensional Systems and Nanostructures

JF - Physica E: Low-Dimensional Systems and Nanostructures

IS - 1-4

T2 - Proceedings pf the International Conference on Superlattices - ICSNN 2002

Y2 - 22 July 2002 through 26 July 2002

ER -