Abstract
We review some recent simulation results on mechanisms of damage production close to a surface during ion irradiation. The simulation work encompasses studies of several metals and semiconductors at irradiation energies ranging from a few tens of eVs to 50 keV. The results show that in dense metals the presence of a surface can dramatically enhance the damage production upto energies of at least 50 keV. The added damage is mostly in the form of vacancy clusters, which can extend quite deep, ∼10 nm, in the sample. In semiconductors, by contrast, the surface in general has little effect on the damage production in bulk.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 74-82 |
| Number of pages | 9 |
| Journal | Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms |
| Volume | 148 |
| Issue number | 1-4 |
| DOIs | |
| State | Published - Jan 1 1999 |
Keywords
- Ion irradiation
- Metals
- Semiconductors
- Surface damage
ASJC Scopus subject areas
- Surfaces, Coatings and Films
- Instrumentation
- Surfaces and Interfaces
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Nordlund, K., Keinonen, J., Ghaly, M., & Averback, R. S. (1999). Recoils, flows and explosions: Surface damage mechanisms in metals and semiconductors during 50 eV-50 keV ion bombardment. Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 148(1-4), 74-82. https://doi.org/10.1016/S0168-583X(98)00819-2