Abstract
We review some recent simulation results on mechanisms of damage production close to a surface during ion irradiation. The simulation work encompasses studies of several metals and semiconductors at irradiation energies ranging from a few tens of eVs to 50 keV. The results show that in dense metals the presence of a surface can dramatically enhance the damage production upto energies of at least 50 keV. The added damage is mostly in the form of vacancy clusters, which can extend quite deep, ∼10 nm, in the sample. In semiconductors, by contrast, the surface in general has little effect on the damage production in bulk.
Original language | English (US) |
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Pages (from-to) | 74-82 |
Number of pages | 9 |
Journal | Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms |
Volume | 148 |
Issue number | 1-4 |
DOIs | |
State | Published - 1999 |
Keywords
- Ion irradiation
- Metals
- Semiconductors
- Surface damage
ASJC Scopus subject areas
- Surfaces, Coatings and Films
- Instrumentation
- Surfaces and Interfaces