TY - JOUR
T1 - Recoils, flows and explosions
T2 - Surface damage mechanisms in metals and semiconductors during 50 eV-50 keV ion bombardment
AU - Nordlund, K.
AU - Keinonen, J.
AU - Ghaly, M.
AU - Averback, R. S.
N1 - Funding Information:
We thank Dr. K. Albe for useful comments on the manuscript. The research was supported by the Academy of Finland, the US Department of Energy, Basic Energy Sciences under grant DEFG02-91ER45439 and the US National Science Foundation under grant NSF DMR-9632252. Grants of computer time from the National Energy Research Computer Center at Livermore, California, the National Center for Supercomputing Applications in Champaign, Illinois, and the Center for Scientific Computing in Espoo, Finland, are gratefully acknowledged.
PY - 1999
Y1 - 1999
N2 - We review some recent simulation results on mechanisms of damage production close to a surface during ion irradiation. The simulation work encompasses studies of several metals and semiconductors at irradiation energies ranging from a few tens of eVs to 50 keV. The results show that in dense metals the presence of a surface can dramatically enhance the damage production upto energies of at least 50 keV. The added damage is mostly in the form of vacancy clusters, which can extend quite deep, ∼10 nm, in the sample. In semiconductors, by contrast, the surface in general has little effect on the damage production in bulk.
AB - We review some recent simulation results on mechanisms of damage production close to a surface during ion irradiation. The simulation work encompasses studies of several metals and semiconductors at irradiation energies ranging from a few tens of eVs to 50 keV. The results show that in dense metals the presence of a surface can dramatically enhance the damage production upto energies of at least 50 keV. The added damage is mostly in the form of vacancy clusters, which can extend quite deep, ∼10 nm, in the sample. In semiconductors, by contrast, the surface in general has little effect on the damage production in bulk.
KW - Ion irradiation
KW - Metals
KW - Semiconductors
KW - Surface damage
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U2 - 10.1016/S0168-583X(98)00819-2
DO - 10.1016/S0168-583X(98)00819-2
M3 - Article
AN - SCOPUS:0033513686
VL - 148
SP - 74
EP - 82
JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
SN - 0168-583X
IS - 1-4
ER -