Recoils, flows and explosions: Surface damage mechanisms in metals and semiconductors during 50 eV-50 keV ion bombardment

K. Nordlund; J. Keinonen; M. Ghaly; R. S. Averback

doi:10.1016/S0168-583X(98)00819-2

Recoils, flows and explosions: Surface damage mechanisms in metals and semiconductors during 50 eV-50 keV ion bombardment

K. Nordlund, J. Keinonen, M. Ghaly, R. S. Averback

Research output: Contribution to journal › Article › peer-review

Abstract

We review some recent simulation results on mechanisms of damage production close to a surface during ion irradiation. The simulation work encompasses studies of several metals and semiconductors at irradiation energies ranging from a few tens of eVs to 50 keV. The results show that in dense metals the presence of a surface can dramatically enhance the damage production upto energies of at least 50 keV. The added damage is mostly in the form of vacancy clusters, which can extend quite deep, ∼10 nm, in the sample. In semiconductors, by contrast, the surface in general has little effect on the damage production in bulk.

Original language	English (US)
Pages (from-to)	74-82
Number of pages	9
Journal	Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume	148
Issue number	1-4
DOIs	https://doi.org/10.1016/S0168-583X(98)00819-2
State	Published - 1999

Keywords

Ion irradiation
Metals
Semiconductors
Surface damage

ASJC Scopus subject areas

Surfaces, Coatings and Films
Instrumentation
Surfaces and Interfaces

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10.1016/S0168-583X(98)00819-2

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Recoils, flows and explosions: Surface damage mechanisms in metals and semiconductors during 50 eV-50 keV ion bombardment. / Nordlund, K.; Keinonen, J.; Ghaly, M. et al.
In: Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, Vol. 148, No. 1-4, 1999, p. 74-82.

Research output: Contribution to journal › Article › peer-review

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title = "Recoils, flows and explosions: Surface damage mechanisms in metals and semiconductors during 50 eV-50 keV ion bombardment",

abstract = "We review some recent simulation results on mechanisms of damage production close to a surface during ion irradiation. The simulation work encompasses studies of several metals and semiconductors at irradiation energies ranging from a few tens of eVs to 50 keV. The results show that in dense metals the presence of a surface can dramatically enhance the damage production upto energies of at least 50 keV. The added damage is mostly in the form of vacancy clusters, which can extend quite deep, ∼10 nm, in the sample. In semiconductors, by contrast, the surface in general has little effect on the damage production in bulk.",

keywords = "Ion irradiation, Metals, Semiconductors, Surface damage",

author = "K. Nordlund and J. Keinonen and M. Ghaly and Averback, {R. S.}",

note = "We thank Dr. K. Albe for useful comments on the manuscript. The research was supported by the Academy of Finland, the US Department of Energy, Basic Energy Sciences under grant DEFG02-91ER45439 and the US National Science Foundation under grant NSF DMR-9632252. Grants of computer time from the National Energy Research Computer Center at Livermore, California, the National Center for Supercomputing Applications in Champaign, Illinois, and the Center for Scientific Computing in Espoo, Finland, are gratefully acknowledged.",

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T2 - Surface damage mechanisms in metals and semiconductors during 50 eV-50 keV ion bombardment

AU - Nordlund, K.

AU - Keinonen, J.

AU - Ghaly, M.

AU - Averback, R. S.

N1 - We thank Dr. K. Albe for useful comments on the manuscript. The research was supported by the Academy of Finland, the US Department of Energy, Basic Energy Sciences under grant DEFG02-91ER45439 and the US National Science Foundation under grant NSF DMR-9632252. Grants of computer time from the National Energy Research Computer Center at Livermore, California, the National Center for Supercomputing Applications in Champaign, Illinois, and the Center for Scientific Computing in Espoo, Finland, are gratefully acknowledged.

PY - 1999

Y1 - 1999

N2 - We review some recent simulation results on mechanisms of damage production close to a surface during ion irradiation. The simulation work encompasses studies of several metals and semiconductors at irradiation energies ranging from a few tens of eVs to 50 keV. The results show that in dense metals the presence of a surface can dramatically enhance the damage production upto energies of at least 50 keV. The added damage is mostly in the form of vacancy clusters, which can extend quite deep, ∼10 nm, in the sample. In semiconductors, by contrast, the surface in general has little effect on the damage production in bulk.

AB - We review some recent simulation results on mechanisms of damage production close to a surface during ion irradiation. The simulation work encompasses studies of several metals and semiconductors at irradiation energies ranging from a few tens of eVs to 50 keV. The results show that in dense metals the presence of a surface can dramatically enhance the damage production upto energies of at least 50 keV. The added damage is mostly in the form of vacancy clusters, which can extend quite deep, ∼10 nm, in the sample. In semiconductors, by contrast, the surface in general has little effect on the damage production in bulk.

KW - Ion irradiation

KW - Metals

KW - Semiconductors

KW - Surface damage

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ER -

Recoils, flows and explosions: Surface damage mechanisms in metals and semiconductors during 50 eV-50 keV ion bombardment

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