Recoils, flows and explosions: Surface damage mechanisms in metals and semiconductors during 50 eV-50 keV ion bombardment

K. Nordlund, J. Keinonen, M. Ghaly, R. S. Averback

Research output: Contribution to journalArticle

Abstract

We review some recent simulation results on mechanisms of damage production close to a surface during ion irradiation. The simulation work encompasses studies of several metals and semiconductors at irradiation energies ranging from a few tens of eVs to 50 keV. The results show that in dense metals the presence of a surface can dramatically enhance the damage production upto energies of at least 50 keV. The added damage is mostly in the form of vacancy clusters, which can extend quite deep, ∼10 nm, in the sample. In semiconductors, by contrast, the surface in general has little effect on the damage production in bulk.

Original languageEnglish (US)
Pages (from-to)74-82
Number of pages9
JournalNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume148
Issue number1-4
DOIs
StatePublished - Jan 1 1999

Keywords

  • Ion irradiation
  • Metals
  • Semiconductors
  • Surface damage

ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Instrumentation
  • Surfaces and Interfaces

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