Abstract
Recessed-gate GaN MESFETs were fabricated using inductively-coupled-plasma-reactive ion etching (ICP-RIE). As a result of the recessed gate process, the GaN MESFETs achieved the highest frequency results compared to those previously reported.
| Original language | English (US) |
|---|---|
| Pages | 41-42 |
| Number of pages | 2 |
| State | Published - 2000 |
| Externally published | Yes |
| Event | 58th Device Research Conference (58th DRC) - Denver, CO, USA Duration: Jun 19 2000 → Jun 21 2000 |
Other
| Other | 58th Device Research Conference (58th DRC) |
|---|---|
| City | Denver, CO, USA |
| Period | 6/19/00 → 6/21/00 |
ASJC Scopus subject areas
- Engineering(all)