Recessed-gate enhancement-mode GaN HEMT with high threshold voltage

W. B. Lanford; T. Tanaka; Y. Otoki; I. Adesida

doi:10.1049/el:20050161

Recessed-gate enhancement-mode GaN HEMT with high threshold voltage

W. B. Lanford, T. Tanaka, Y. Otoki, I. Adesida

Research output: Contribution to journal › Article › peer-review

Abstract

Fabrication of enhancement-mode high electron mobility transistors (E-HEMTs) on GaN/AlGaN heterostructures grown on SiC substrates is reported. Enhancement-mode operation was achieved with high threshold voltage (V _T) through the combination of low-damage and controllable dry gate-recessing and the annealing of the Ni/Au gates. As-recessed E-HEMTs with 1.0 μm gates exhibited a threshold voltage (V_T) of 0.35 V, maximum drain current (I_D.max) of 505 mA/mm, and maximum transconductance (g_m.mat) of 345 mS/mm; the corresponding post-gate anneal characteristics were 0.47 V, 455 mA/mm and 310 mS/mm, respectively. The RF performance is unaffected by the post-gate anneal process with a unity current gain cutoff frequency (f_T) of 10 GHz.

Original language	English (US)
Pages (from-to)	449-450
Number of pages	2
Journal	Electronics Letters
Volume	41
Issue number	7
DOIs	https://doi.org/10.1049/el:20050161
State	Published - Mar 31 2005
Externally published	Yes

ASJC Scopus subject areas

Electrical and Electronic Engineering

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10.1049/el:20050161

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@article{2e0066206fee481ab5e891596b640969,

title = "Recessed-gate enhancement-mode GaN HEMT with high threshold voltage",

abstract = "Fabrication of enhancement-mode high electron mobility transistors (E-HEMTs) on GaN/AlGaN heterostructures grown on SiC substrates is reported. Enhancement-mode operation was achieved with high threshold voltage (V T) through the combination of low-damage and controllable dry gate-recessing and the annealing of the Ni/Au gates. As-recessed E-HEMTs with 1.0 μm gates exhibited a threshold voltage (VT) of 0.35 V, maximum drain current (ID.max) of 505 mA/mm, and maximum transconductance (gm.mat) of 345 mS/mm; the corresponding post-gate anneal characteristics were 0.47 V, 455 mA/mm and 310 mS/mm, respectively. The RF performance is unaffected by the post-gate anneal process with a unity current gain cutoff frequency (fT) of 10 GHz.",

author = "Lanford, {W. B.} and T. Tanaka and Y. Otoki and I. Adesida",

year = "2005",

month = mar,

day = "31",

doi = "10.1049/el:20050161",

language = "English (US)",

volume = "41",

pages = "449--450",

journal = "Electronics Letters",

issn = "0013-5194",

publisher = "John Wiley & Sons, Ltd.",

number = "7",

}

TY - JOUR

T1 - Recessed-gate enhancement-mode GaN HEMT with high threshold voltage

AU - Lanford, W. B.

AU - Tanaka, T.

AU - Otoki, Y.

AU - Adesida, I.

PY - 2005/3/31

Y1 - 2005/3/31

N2 - Fabrication of enhancement-mode high electron mobility transistors (E-HEMTs) on GaN/AlGaN heterostructures grown on SiC substrates is reported. Enhancement-mode operation was achieved with high threshold voltage (V T) through the combination of low-damage and controllable dry gate-recessing and the annealing of the Ni/Au gates. As-recessed E-HEMTs with 1.0 μm gates exhibited a threshold voltage (VT) of 0.35 V, maximum drain current (ID.max) of 505 mA/mm, and maximum transconductance (gm.mat) of 345 mS/mm; the corresponding post-gate anneal characteristics were 0.47 V, 455 mA/mm and 310 mS/mm, respectively. The RF performance is unaffected by the post-gate anneal process with a unity current gain cutoff frequency (fT) of 10 GHz.

AB - Fabrication of enhancement-mode high electron mobility transistors (E-HEMTs) on GaN/AlGaN heterostructures grown on SiC substrates is reported. Enhancement-mode operation was achieved with high threshold voltage (V T) through the combination of low-damage and controllable dry gate-recessing and the annealing of the Ni/Au gates. As-recessed E-HEMTs with 1.0 μm gates exhibited a threshold voltage (VT) of 0.35 V, maximum drain current (ID.max) of 505 mA/mm, and maximum transconductance (gm.mat) of 345 mS/mm; the corresponding post-gate anneal characteristics were 0.47 V, 455 mA/mm and 310 mS/mm, respectively. The RF performance is unaffected by the post-gate anneal process with a unity current gain cutoff frequency (fT) of 10 GHz.

UR - http://www.scopus.com/inward/record.url?scp=17444403484&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=17444403484&partnerID=8YFLogxK

U2 - 10.1049/el:20050161

DO - 10.1049/el:20050161

M3 - Article

AN - SCOPUS:17444403484

SN - 0013-5194

VL - 41

SP - 449

EP - 450

JO - Electronics Letters

JF - Electronics Letters

IS - 7

ER -

Recessed-gate enhancement-mode GaN HEMT with high threshold voltage

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