Recent Progress in Obtaining Semiconducting Single-Walled Carbon Nanotubes for Transistor Applications

Ahmad E. Islam, John A. Rogers, Muhammad A. Alam

Research output: Contribution to journalReview article

Abstract

High purity semiconducting single-walled carbon nanotubes (s-SWCNTs) with a narrow diameter distribution are required for high-performance transistors. Achieving this goal is extremely challenging because the as-grown material contains mixtures of s-SWCNTs and metallic- (m-) SWCNTs with wide diameter distributions, typically inadequate for integrated circuits. Since 2000, numerous ex situ methods have been proposed to improve the purity of the s-SWCNTs. The majority of these techniques fail to maintain the quality and integrity of the s-SWCNTs with a few notable exceptions. Here, the progress in realizing high purity s-SWCNTs in as-grown and post-processed materials is highlighted. A comparison of transistor parameters (such as on/off ratio and field-effect mobility) obtained from test structures establishes the effectiveness of various methods and suggests opportunities for future improvements.

Original languageEnglish (US)
Pages (from-to)7908-7937
Number of pages30
JournalAdvanced Materials
Volume27
Issue number48
DOIs
StatePublished - Dec 22 2015

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Keywords

  • carbon nanotubes
  • field-effect mobility
  • on/off ratios, semiconducting purity
  • transistor applications

ASJC Scopus subject areas

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

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