Recent applications of Monte Carlo methods for semiconductor microdevice simulation

B. Shapo, C. Ball, I. Kizilyalli, Umberto Ravaioli

Research output: Contribution to journalArticle

Abstract

Monte Carlo simulations for semiconductor devices are very time consuming. We have investigated ways to speed up calculations on supercomputers and a method to incorporate overshoot effects in simple drift-diffusion models for submicron devices, using coefficients obtained from Monte Carlo experiments. An Ensemble Monte Carlo algorithm, suitable for self-consistent device simulation, has been vectorized, and in preliminary runs three times faster on a CRAY X/MP 48 supercomputer. The inclusion of overshoot terms in a drift-diffusion simulation for a MESFET structure, shows that the main overshoot effects can be incorporated in a simple model suitable for circuit simulation. Increased problems in stability, however, reduce the efficiency of traditional finite difference schemes and require further refinement in the numerical methods.

Original languageEnglish (US)
Pages (from-to)39-43
Number of pages5
JournalSuperlattices and Microstructures
Volume4
Issue number1
DOIs
StatePublished - 1988

Fingerprint

Supercomputers
Monte Carlo method
Monte Carlo methods
Semiconductor materials
supercomputers
Circuit simulation
Semiconductor devices
Numerical methods
simulation
semiconductor devices
field effect transistors
Experiments
inclusions
coefficients
Monte Carlo simulation

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

Recent applications of Monte Carlo methods for semiconductor microdevice simulation. / Shapo, B.; Ball, C.; Kizilyalli, I.; Ravaioli, Umberto.

In: Superlattices and Microstructures, Vol. 4, No. 1, 1988, p. 39-43.

Research output: Contribution to journalArticle

@article{24352da6d00f4550b0337747070471ea,
title = "Recent applications of Monte Carlo methods for semiconductor microdevice simulation",
abstract = "Monte Carlo simulations for semiconductor devices are very time consuming. We have investigated ways to speed up calculations on supercomputers and a method to incorporate overshoot effects in simple drift-diffusion models for submicron devices, using coefficients obtained from Monte Carlo experiments. An Ensemble Monte Carlo algorithm, suitable for self-consistent device simulation, has been vectorized, and in preliminary runs three times faster on a CRAY X/MP 48 supercomputer. The inclusion of overshoot terms in a drift-diffusion simulation for a MESFET structure, shows that the main overshoot effects can be incorporated in a simple model suitable for circuit simulation. Increased problems in stability, however, reduce the efficiency of traditional finite difference schemes and require further refinement in the numerical methods.",
author = "B. Shapo and C. Ball and I. Kizilyalli and Umberto Ravaioli",
year = "1988",
doi = "10.1016/0749-6036(88)90264-9",
language = "English (US)",
volume = "4",
pages = "39--43",
journal = "Superlattices and Microstructures",
issn = "0749-6036",
publisher = "Academic Press Inc.",
number = "1",

}

TY - JOUR

T1 - Recent applications of Monte Carlo methods for semiconductor microdevice simulation

AU - Shapo, B.

AU - Ball, C.

AU - Kizilyalli, I.

AU - Ravaioli, Umberto

PY - 1988

Y1 - 1988

N2 - Monte Carlo simulations for semiconductor devices are very time consuming. We have investigated ways to speed up calculations on supercomputers and a method to incorporate overshoot effects in simple drift-diffusion models for submicron devices, using coefficients obtained from Monte Carlo experiments. An Ensemble Monte Carlo algorithm, suitable for self-consistent device simulation, has been vectorized, and in preliminary runs three times faster on a CRAY X/MP 48 supercomputer. The inclusion of overshoot terms in a drift-diffusion simulation for a MESFET structure, shows that the main overshoot effects can be incorporated in a simple model suitable for circuit simulation. Increased problems in stability, however, reduce the efficiency of traditional finite difference schemes and require further refinement in the numerical methods.

AB - Monte Carlo simulations for semiconductor devices are very time consuming. We have investigated ways to speed up calculations on supercomputers and a method to incorporate overshoot effects in simple drift-diffusion models for submicron devices, using coefficients obtained from Monte Carlo experiments. An Ensemble Monte Carlo algorithm, suitable for self-consistent device simulation, has been vectorized, and in preliminary runs three times faster on a CRAY X/MP 48 supercomputer. The inclusion of overshoot terms in a drift-diffusion simulation for a MESFET structure, shows that the main overshoot effects can be incorporated in a simple model suitable for circuit simulation. Increased problems in stability, however, reduce the efficiency of traditional finite difference schemes and require further refinement in the numerical methods.

UR - http://www.scopus.com/inward/record.url?scp=0023591102&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0023591102&partnerID=8YFLogxK

U2 - 10.1016/0749-6036(88)90264-9

DO - 10.1016/0749-6036(88)90264-9

M3 - Article

AN - SCOPUS:0023591102

VL - 4

SP - 39

EP - 43

JO - Superlattices and Microstructures

JF - Superlattices and Microstructures

SN - 0749-6036

IS - 1

ER -