Realization of unidirectional planar GaAs nanowires on GaAs (110) substrates

Ryan Dowdy; Donald A. Walko; Seth A. Fortuna; Xiuling Li

doi:10.1109/LED.2012.2186115

Realization of unidirectional planar GaAs nanowires on GaAs (110) substrates

Ryan Dowdy, Donald A. Walko, Seth A. Fortuna, Xiuling Li

Research output: Contribution to journal › Article › peer-review

Abstract

A self-aligned unidirectional planar GaAs nanowire (NW) array is realized by growing on (110) GaAs substrates through the Au-catalyzed vapor-liquid-solid mechanism. All NWs on (110) substrates propagate along the [00-1] direction, yielding planar NWs with trapezoidal cross sections where the top surface and sidewalls are identified by micro X-ray diffraction analysis to be [110], [010], and [100] facets, respectively. Depletion-mode long-channel metal-semiconductor field-effect transistors using these [00-1] GaAs NWs as channels exhibit well-defined dc output and transfer characteristics, confirming the high material quality of the NWs. Completely ordered site controlled arrays of planar NWs are demonstrated by growing on (110) substrates with Au catalyst nanoparticles patterned using electron beam lithography.

Original language	English (US)
Article number	6165635
Pages (from-to)	522-524
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	33
Issue number	4
DOIs	https://doi.org/10.1109/LED.2012.2186115
State	Published - Apr 2012

Keywords

GaAs
metal-semiconductor field-effect transistor (MESFET)
nanowire (NW)
nanowire array

ASJC Scopus subject areas

Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials

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10.1109/LED.2012.2186115

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title = "Realization of unidirectional planar GaAs nanowires on GaAs (110) substrates",

abstract = "A self-aligned unidirectional planar GaAs nanowire (NW) array is realized by growing on (110) GaAs substrates through the Au-catalyzed vapor-liquid-solid mechanism. All NWs on (110) substrates propagate along the [00-1] direction, yielding planar NWs with trapezoidal cross sections where the top surface and sidewalls are identified by micro X-ray diffraction analysis to be [110], [010], and [100] facets, respectively. Depletion-mode long-channel metal-semiconductor field-effect transistors using these [00-1] GaAs NWs as channels exhibit well-defined dc output and transfer characteristics, confirming the high material quality of the NWs. Completely ordered site controlled arrays of planar NWs are demonstrated by growing on (110) substrates with Au catalyst nanoparticles patterned using electron beam lithography.",

keywords = "GaAs, metal-semiconductor field-effect transistor (MESFET), nanowire (NW), nanowire array",

author = "Ryan Dowdy and Walko, {Donald A.} and Fortuna, {Seth A.} and Xiuling Li",

note = "Funding Information: Manuscript received January 9, 2012; accepted January 21, 2012. Date of publication March 7, 2012; date of current version March 23, 2012. This work was supported in part by Defense Advanced Research Projects Agency Young Faculty Award under Grant N66001-09-1-2107, Office of Naval Research Young Investigator Program YIP Award N000141110634, National Science Foundation Awards 1001928 (ECCS) and 1006581 (DMR), and by the Robert Rathbun Wilson Graduate Fellowship from Argonne National Laboratory (RD). Use of the Advanced Photon Source was supported by the U.S. Department of Energy, Office of Science, Office of Basic Energy Sciences, under Contract DE-AC02-06CH11357. The review of this letter was arranged by Editor G. Meneghesso.",

year = "2012",

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doi = "10.1109/LED.2012.2186115",

language = "English (US)",

volume = "33",

pages = "522--524",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

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N1 - Funding Information: Manuscript received January 9, 2012; accepted January 21, 2012. Date of publication March 7, 2012; date of current version March 23, 2012. This work was supported in part by Defense Advanced Research Projects Agency Young Faculty Award under Grant N66001-09-1-2107, Office of Naval Research Young Investigator Program YIP Award N000141110634, National Science Foundation Awards 1001928 (ECCS) and 1006581 (DMR), and by the Robert Rathbun Wilson Graduate Fellowship from Argonne National Laboratory (RD). Use of the Advanced Photon Source was supported by the U.S. Department of Energy, Office of Science, Office of Basic Energy Sciences, under Contract DE-AC02-06CH11357. The review of this letter was arranged by Editor G. Meneghesso.

PY - 2012/4

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N2 - A self-aligned unidirectional planar GaAs nanowire (NW) array is realized by growing on (110) GaAs substrates through the Au-catalyzed vapor-liquid-solid mechanism. All NWs on (110) substrates propagate along the [00-1] direction, yielding planar NWs with trapezoidal cross sections where the top surface and sidewalls are identified by micro X-ray diffraction analysis to be [110], [010], and [100] facets, respectively. Depletion-mode long-channel metal-semiconductor field-effect transistors using these [00-1] GaAs NWs as channels exhibit well-defined dc output and transfer characteristics, confirming the high material quality of the NWs. Completely ordered site controlled arrays of planar NWs are demonstrated by growing on (110) substrates with Au catalyst nanoparticles patterned using electron beam lithography.

AB - A self-aligned unidirectional planar GaAs nanowire (NW) array is realized by growing on (110) GaAs substrates through the Au-catalyzed vapor-liquid-solid mechanism. All NWs on (110) substrates propagate along the [00-1] direction, yielding planar NWs with trapezoidal cross sections where the top surface and sidewalls are identified by micro X-ray diffraction analysis to be [110], [010], and [100] facets, respectively. Depletion-mode long-channel metal-semiconductor field-effect transistors using these [00-1] GaAs NWs as channels exhibit well-defined dc output and transfer characteristics, confirming the high material quality of the NWs. Completely ordered site controlled arrays of planar NWs are demonstrated by growing on (110) substrates with Au catalyst nanoparticles patterned using electron beam lithography.

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Realization of unidirectional planar GaAs nanowires on GaAs (110) substrates

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