Abstract
A self-aligned unidirectional planar GaAs nanowire (NW) array is realized by growing on (110) GaAs substrates through the Au-catalyzed vapor-liquid-solid mechanism. All NWs on (110) substrates propagate along the [00-1] direction, yielding planar NWs with trapezoidal cross sections where the top surface and sidewalls are identified by micro X-ray diffraction analysis to be [110], [010], and [100] facets, respectively. Depletion-mode long-channel metal-semiconductor field-effect transistors using these [00-1] GaAs NWs as channels exhibit well-defined dc output and transfer characteristics, confirming the high material quality of the NWs. Completely ordered site controlled arrays of planar NWs are demonstrated by growing on (110) substrates with Au catalyst nanoparticles patterned using electron beam lithography.
| Original language | English (US) |
|---|---|
| Article number | 6165635 |
| Pages (from-to) | 522-524 |
| Number of pages | 3 |
| Journal | IEEE Electron Device Letters |
| Volume | 33 |
| Issue number | 4 |
| DOIs | |
| State | Published - Apr 1 2012 |
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Keywords
- GaAs
- metal-semiconductor field-effect transistor (MESFET)
- nanowire (NW)
- nanowire array
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Electronic, Optical and Magnetic Materials
Cite this
Realization of unidirectional planar GaAs nanowires on GaAs (110) substrates. / Dowdy, Ryan; Walko, Donald A.; Fortuna, Seth A.; Li, Xiuling.
In: IEEE Electron Device Letters, Vol. 33, No. 4, 6165635, 01.04.2012, p. 522-524.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Realization of unidirectional planar GaAs nanowires on GaAs (110) substrates
AU - Dowdy, Ryan
AU - Walko, Donald A.
AU - Fortuna, Seth A.
AU - Li, Xiuling
PY - 2012/4/1
Y1 - 2012/4/1
N2 - A self-aligned unidirectional planar GaAs nanowire (NW) array is realized by growing on (110) GaAs substrates through the Au-catalyzed vapor-liquid-solid mechanism. All NWs on (110) substrates propagate along the [00-1] direction, yielding planar NWs with trapezoidal cross sections where the top surface and sidewalls are identified by micro X-ray diffraction analysis to be [110], [010], and [100] facets, respectively. Depletion-mode long-channel metal-semiconductor field-effect transistors using these [00-1] GaAs NWs as channels exhibit well-defined dc output and transfer characteristics, confirming the high material quality of the NWs. Completely ordered site controlled arrays of planar NWs are demonstrated by growing on (110) substrates with Au catalyst nanoparticles patterned using electron beam lithography.
AB - A self-aligned unidirectional planar GaAs nanowire (NW) array is realized by growing on (110) GaAs substrates through the Au-catalyzed vapor-liquid-solid mechanism. All NWs on (110) substrates propagate along the [00-1] direction, yielding planar NWs with trapezoidal cross sections where the top surface and sidewalls are identified by micro X-ray diffraction analysis to be [110], [010], and [100] facets, respectively. Depletion-mode long-channel metal-semiconductor field-effect transistors using these [00-1] GaAs NWs as channels exhibit well-defined dc output and transfer characteristics, confirming the high material quality of the NWs. Completely ordered site controlled arrays of planar NWs are demonstrated by growing on (110) substrates with Au catalyst nanoparticles patterned using electron beam lithography.
KW - GaAs
KW - metal-semiconductor field-effect transistor (MESFET)
KW - nanowire (NW)
KW - nanowire array
UR - http://www.scopus.com/inward/record.url?scp=84862824521&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84862824521&partnerID=8YFLogxK
U2 - 10.1109/LED.2012.2186115
DO - 10.1109/LED.2012.2186115
M3 - Article
AN - SCOPUS:84862824521
VL - 33
SP - 522
EP - 524
JO - IEEE Electron Device Letters
JF - IEEE Electron Device Letters
SN - 0741-3106
IS - 4
M1 - 6165635
ER -