Realization of unidirectional planar GaAs nanowires on GaAs (110) substrates

Ryan Dowdy, Donald A. Walko, Seth A. Fortuna, Xiuling Li

Research output: Contribution to journalArticle

Abstract

A self-aligned unidirectional planar GaAs nanowire (NW) array is realized by growing on (110) GaAs substrates through the Au-catalyzed vapor-liquid-solid mechanism. All NWs on (110) substrates propagate along the [00-1] direction, yielding planar NWs with trapezoidal cross sections where the top surface and sidewalls are identified by micro X-ray diffraction analysis to be [110], [010], and [100] facets, respectively. Depletion-mode long-channel metal-semiconductor field-effect transistors using these [00-1] GaAs NWs as channels exhibit well-defined dc output and transfer characteristics, confirming the high material quality of the NWs. Completely ordered site controlled arrays of planar NWs are demonstrated by growing on (110) substrates with Au catalyst nanoparticles patterned using electron beam lithography.

Original languageEnglish (US)
Article number6165635
Pages (from-to)522-524
Number of pages3
JournalIEEE Electron Device Letters
Volume33
Issue number4
DOIs
StatePublished - Apr 1 2012

Fingerprint

Nanowires
Substrates
MESFET devices
Electron beam lithography
X ray diffraction analysis
Vapors
Nanoparticles
Catalysts
Liquids
gallium arsenide
Direction compound

Keywords

  • GaAs
  • metal-semiconductor field-effect transistor (MESFET)
  • nanowire (NW)
  • nanowire array

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Realization of unidirectional planar GaAs nanowires on GaAs (110) substrates. / Dowdy, Ryan; Walko, Donald A.; Fortuna, Seth A.; Li, Xiuling.

In: IEEE Electron Device Letters, Vol. 33, No. 4, 6165635, 01.04.2012, p. 522-524.

Research output: Contribution to journalArticle

Dowdy, Ryan ; Walko, Donald A. ; Fortuna, Seth A. ; Li, Xiuling. / Realization of unidirectional planar GaAs nanowires on GaAs (110) substrates. In: IEEE Electron Device Letters. 2012 ; Vol. 33, No. 4. pp. 522-524.
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