Realization of unidirectional planar GaAs nanowires on GaAs (110) substrates

Ryan Dowdy; Donald A. Walko; Seth A. Fortuna; Xiuling Li

doi:10.1109/LED.2012.2186115

Realization of unidirectional planar GaAs nanowires on GaAs (110) substrates

Ryan Dowdy, Donald A. Walko, Seth A. Fortuna, Xiuling Li

Research output: Contribution to journal › Article

Abstract

A self-aligned unidirectional planar GaAs nanowire (NW) array is realized by growing on (110) GaAs substrates through the Au-catalyzed vapor-liquid-solid mechanism. All NWs on (110) substrates propagate along the [00-1] direction, yielding planar NWs with trapezoidal cross sections where the top surface and sidewalls are identified by micro X-ray diffraction analysis to be [110], [010], and [100] facets, respectively. Depletion-mode long-channel metal-semiconductor field-effect transistors using these [00-1] GaAs NWs as channels exhibit well-defined dc output and transfer characteristics, confirming the high material quality of the NWs. Completely ordered site controlled arrays of planar NWs are demonstrated by growing on (110) substrates with Au catalyst nanoparticles patterned using electron beam lithography.

Original language	English (US)
Article number	6165635
Pages (from-to)	522-524
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	33
Issue number	4
DOIs	https://doi.org/10.1109/LED.2012.2186115
State	Published - Apr 1 2012

Keywords

GaAs
metal-semiconductor field-effect transistor (MESFET)
nanowire (NW)
nanowire array

ASJC Scopus subject areas

Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials

Access to Document

10.1109/LED.2012.2186115

Fingerprint Dive into the research topics of 'Realization of unidirectional planar GaAs nanowires on GaAs (110) substrates'. Together they form a unique fingerprint.

Cite this

Dowdy, R., Walko, D. A., Fortuna, S. A., & Li, X. (2012). Realization of unidirectional planar GaAs nanowires on GaAs (110) substrates. IEEE Electron Device Letters, 33(4), 522-524. [6165635]. https://doi.org/10.1109/LED.2012.2186115

@article{40b8b02a4b904353acccf3501bf124a2,

title = "Realization of unidirectional planar GaAs nanowires on GaAs (110) substrates",

abstract = "A self-aligned unidirectional planar GaAs nanowire (NW) array is realized by growing on (110) GaAs substrates through the Au-catalyzed vapor-liquid-solid mechanism. All NWs on (110) substrates propagate along the [00-1] direction, yielding planar NWs with trapezoidal cross sections where the top surface and sidewalls are identified by micro X-ray diffraction analysis to be [110], [010], and [100] facets, respectively. Depletion-mode long-channel metal-semiconductor field-effect transistors using these [00-1] GaAs NWs as channels exhibit well-defined dc output and transfer characteristics, confirming the high material quality of the NWs. Completely ordered site controlled arrays of planar NWs are demonstrated by growing on (110) substrates with Au catalyst nanoparticles patterned using electron beam lithography.",

keywords = "GaAs, metal-semiconductor field-effect transistor (MESFET), nanowire (NW), nanowire array",

author = "Ryan Dowdy and Walko, {Donald A.} and Fortuna, {Seth A.} and Xiuling Li",

year = "2012",

month = apr,

day = "1",

doi = "10.1109/LED.2012.2186115",

language = "English (US)",

volume = "33",

pages = "522--524",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "4",

}

TY - JOUR

T1 - Realization of unidirectional planar GaAs nanowires on GaAs (110) substrates

AU - Dowdy, Ryan

AU - Walko, Donald A.

AU - Fortuna, Seth A.

AU - Li, Xiuling

PY - 2012/4/1

Y1 - 2012/4/1

N2 - A self-aligned unidirectional planar GaAs nanowire (NW) array is realized by growing on (110) GaAs substrates through the Au-catalyzed vapor-liquid-solid mechanism. All NWs on (110) substrates propagate along the [00-1] direction, yielding planar NWs with trapezoidal cross sections where the top surface and sidewalls are identified by micro X-ray diffraction analysis to be [110], [010], and [100] facets, respectively. Depletion-mode long-channel metal-semiconductor field-effect transistors using these [00-1] GaAs NWs as channels exhibit well-defined dc output and transfer characteristics, confirming the high material quality of the NWs. Completely ordered site controlled arrays of planar NWs are demonstrated by growing on (110) substrates with Au catalyst nanoparticles patterned using electron beam lithography.

AB - A self-aligned unidirectional planar GaAs nanowire (NW) array is realized by growing on (110) GaAs substrates through the Au-catalyzed vapor-liquid-solid mechanism. All NWs on (110) substrates propagate along the [00-1] direction, yielding planar NWs with trapezoidal cross sections where the top surface and sidewalls are identified by micro X-ray diffraction analysis to be [110], [010], and [100] facets, respectively. Depletion-mode long-channel metal-semiconductor field-effect transistors using these [00-1] GaAs NWs as channels exhibit well-defined dc output and transfer characteristics, confirming the high material quality of the NWs. Completely ordered site controlled arrays of planar NWs are demonstrated by growing on (110) substrates with Au catalyst nanoparticles patterned using electron beam lithography.

KW - GaAs

KW - metal-semiconductor field-effect transistor (MESFET)

KW - nanowire (NW)

KW - nanowire array

UR - http://www.scopus.com/inward/record.url?scp=84862824521&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84862824521&partnerID=8YFLogxK

U2 - 10.1109/LED.2012.2186115

DO - 10.1109/LED.2012.2186115

M3 - Article

AN - SCOPUS:84862824521

VL - 33

SP - 522

EP - 524

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

SN - 0741-3106

IS - 4

M1 - 6165635

ER -