Real time spectroscopic ellipsometry studies of ultrathin CIGS films deposited by 1-stage, 2-stage and 3-stage co-evaporation processes

Krishna Aryal, Grace Rajan, Tasnuva Ashrafee, Vikash Ranjan, Puruswottam Aryal, Angus Rockett, Robert W. Collins, Sylvain Marsillac

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Ultrathin Cu(In,Ga)Se2 (CIGS) films were deposited by 1-stage, 2-stage and 3-stage co-evaporation processes. In situ, real time spectroscopic ellipsometry (RTSE) was used to study the growth dynamics of the ultrathin CIGS films. Time dependent surface roughness layer (ds) and bulk layer (db) thicknesses were extracted in the early stages of film growth. Exsitu spectroscopic ellipsometry was used to characterize the fundamental optical constants of these films. Other ex-situ measurements were performed on each ultrathin layer to corroborate composition, thickness, grain size and surface roughness thickness obtained by the SE measurements.

Original languageEnglish (US)
Title of host publication2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages318-322
Number of pages5
ISBN (Electronic)9781479943982
DOIs
StatePublished - Oct 15 2014
Event40th IEEE Photovoltaic Specialist Conference, PVSC 2014 - Denver, United States
Duration: Jun 8 2014Jun 13 2014

Publication series

Name2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014

Other

Other40th IEEE Photovoltaic Specialist Conference, PVSC 2014
Country/TerritoryUnited States
CityDenver
Period6/8/146/13/14

Keywords

  • CIGS
  • photovoltaic cells
  • Spectroscopic ellipsometry
  • ultrathin film

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

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