@inproceedings{b855a528e3df4b26898e026feb1a1f88,
title = "Real space transfer noise of GaAs p-HEMTs",
abstract = "From the measured noise data in a GaAs p-HEMT over a 2-18 GHz frequency range, we have identified the magnitudes of the gate and drain noise sources in the 2-DEG saturation velocity region of undoped InGaAs channel. Additional gate and drain noise sources in the parallel doped AlGaAs channel contribute to the overall noise in p-HEMT. We call this additional noise the real space transfer noise.",
author = "M. Feng and D. Caruth and Hsia, \{S. K.\} and Fendrich, \{J. A.\}",
note = "Publisher Copyright: {\textcopyright} 1998 IEEE.; 24th IEEE International Symposium on Compound Semiconductors, ISCS 1997 ; Conference date: 08-09-1997 Through 11-09-1997",
year = "1997",
doi = "10.1109/ISCS.1998.711707",
language = "English (US)",
isbn = "0780338839",
series = "Proceedings of the IEEE 24th International Symposium on Compound Semiconductors, ISCS 1997",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "463--466",
editor = "Mike Melloch and Reed, \{Mark A.\}",
booktitle = "Proceedings of the IEEE 24th International Symposium on Compound Semiconductors, ISCS 1997",
address = "United States",
}