Real space transfer noise of GaAs p-HEMTs

M. Feng, D. Caruth, S. K. Hsia, J. A. Fendrich

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

From the measured noise data in a GaAs p-HEMT over a 2-18 GHz frequency range, we have identified the magnitudes of the gate and drain noise sources in the 2-DEG saturation velocity region of undoped InGaAs channel. Additional gate and drain noise sources in the parallel doped AlGaAs channel contribute to the overall noise in p-HEMT. We call this additional noise the real space transfer noise.

Original languageEnglish (US)
Title of host publicationProceedings of the IEEE 24th International Symposium on Compound Semiconductors, ISCS 1997
EditorsMike Melloch, Mark A. Reed
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages463-466
Number of pages4
ISBN (Print)0780338839, 9780780338838
DOIs
StatePublished - Jan 1 1997
Event24th IEEE International Symposium on Compound Semiconductors, ISCS 1997 - San Diego, United States
Duration: Sep 8 1997Sep 11 1997

Publication series

NameProceedings of the IEEE 24th International Symposium on Compound Semiconductors, ISCS 1997

Other

Other24th IEEE International Symposium on Compound Semiconductors, ISCS 1997
CountryUnited States
CitySan Diego
Period9/8/979/11/97

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

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