Reactive magnetron sputtering of silicon in Ar + CH₄: identity and energy of the SiC growth species

Keyphrases

• Energy Distribution 100%
• Reactive Magnetron Sputtering 100%
• Si1-xCx 100%
• Methane 100%
• Argon Ions 100%
• Film Composition 100%
• Carbon Ions 100%
• Silicon Ions 100%
• Si Ions 100%
• Hydrocarbon Ions 100%
• SiC Growth 100%
• Methane Consumption 100%
• Mass Spectrometry 50%
• Film Deposition 50%
• In(III) 50%
• Deposition Rate 50%
• Argon 50%
• Low Temperature Growth 50%
• Carbon Source 50%
• Consumption Rate 50%
• Partial Pressure 50%
• Silicon Target 50%
• Target Surface 50%
• Ion Flux 50%
• Energy Spread 50%
• Sputtered Neutral 50%
• Silicon-carbon 50%
• C-Si 50%
• Fixed Target 50%
• Particle Flux 50%
• Plasma Potential 50%
• Target Current 50%
• Substrate Position 50%
• Double Modulation 50%

Material Science

• Silicon 100%
• Magnetron Sputtering 100%
• Film 75%
• Silicon Ion 50%
• Film Deposition 25%