Abstract
Reactive ion etching of silicon and tantalum silicides was investigated using mixtures of SiF//4/Cl//2. The electrode was covered with Teflon and kept at 60 degree C during processing. Moderate etch-rates and a high degree of anisotropy were obtained. The etch-rates and profiles obtained were observed to be dependent on the gas mixture ratios and were relatively independent of other process parameters. Sub-half-micron structures of Si and TaSi//2 were obtained. Submicron structures of TaSi//2/poly-Si with 4000 A line width and 1000 A space have been achieved in a single step process. Mechanisms of etching in this system are discussed.
Original language | English (US) |
---|---|
Pages (from-to) | 451-457 |
Number of pages | 7 |
Journal | Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors |
Volume | 6 |
Issue number | 5 |
State | Published - Sep 1985 |
Externally published | Yes |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry