REACTIVE ION ETCHING OF SILICON AND TANTALUM SILICIDE FOR SUBMICRON STRUCTURES.

Jianzhong Li Jianzhong, Ilesanmi Adesida, E. D. Wolf

Research output: Contribution to journalArticlepeer-review

Abstract

Reactive ion etching of silicon and tantalum silicides was investigated using mixtures of SiF//4/Cl//2. The electrode was covered with Teflon and kept at 60 degree C during processing. Moderate etch-rates and a high degree of anisotropy were obtained. The etch-rates and profiles obtained were observed to be dependent on the gas mixture ratios and were relatively independent of other process parameters. Sub-half-micron structures of Si and TaSi//2 were obtained. Submicron structures of TaSi//2/poly-Si with 4000 A line width and 1000 A space have been achieved in a single step process. Mechanisms of etching in this system are discussed.

Original languageEnglish (US)
Pages (from-to)451-457
Number of pages7
JournalPan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors
Volume6
Issue number5
StatePublished - Sep 1 1985

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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