Abstract
The characteristics of the reactive ion etching (RIE) of gallium nitride (GaN) have been investigated using HBr, 1:1 HBr:Ar, and 1:1 HBr:H, plasmas. Etch rates were found to increase with plasma self-bias voltage for all gas mixtures exceeding 60nm/min at -400V for pure HBr. Higher etch rates were obtained for pure HBr than for HBr mixtures with Ar and H,. Chamber pressure was also found to slightly affect etch rates for the pressure ranges investigated, 'The anisotropy of etched profiles was found to improve with increasing pressure. Smooth etched surfaces are also demonstrated.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 1895-1897 |
| Number of pages | 3 |
| Journal | Electronics Letters |
| Volume | 30 |
| Issue number | 22 |
| DOIs | |
| State | Published - Oct 13 1994 |
| Externally published | Yes |
Keywords
- Gallium nitride
- Reactive ion etching
ASJC Scopus subject areas
- Electrical and Electronic Engineering