Reactive ion etching of gallium nitride using hydrogen bromide plasmas

A. T. Ping, I. Adesida, M. Asif Khan, J. N. Kuznia

Research output: Contribution to journalArticlepeer-review


The characteristics of the reactive ion etching (RIE) of gallium nitride (GaN) have been investigated using HBr, 1:1 HBr:Ar, and 1:1 HBr:H, plasmas. Etch rates were found to increase with plasma self-bias voltage for all gas mixtures exceeding 60nm/min at -400V for pure HBr. Higher etch rates were obtained for pure HBr than for HBr mixtures with Ar and H,. Chamber pressure was also found to slightly affect etch rates for the pressure ranges investigated, 'The anisotropy of etched profiles was found to improve with increasing pressure. Smooth etched surfaces are also demonstrated.

Original languageEnglish (US)
Pages (from-to)1895-1897
Number of pages3
JournalElectronics Letters
Issue number22
StatePublished - Oct 13 1994


  • Gallium nitride
  • Reactive ion etching

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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