Reactive cluster epitaxy: CoSi2 nanoparticles on (111) Si

C. G. Zimmermann, M. Yeadon, M. Kleinschmit, R. S. Averback, J. M. Gibson

Research output: Contribution to journalArticle


The formation of epitaxial CoSi2 islands of nanoscopic dimensions is reported using the technique of reactive cluster deposition. Co clusters in the size range 5-50nm were synthesized by sputtering a high purity Co target inside a UHV sputtering chamber. The clusters were then deposited on the reconstructed Si (111) surface. Upon annealing the particles reacted with the Si substrate to form epitaxial CoSi2. Our observations were made using a JEOL 200CX transmission electron microscope modified for in-situ sputtering and ultrahigh vacuum conditions.

Original languageEnglish (US)
Pages (from-to)97-102
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
StatePublished - Jan 1 2000


ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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