Reactive cluster epitaxy: CoSi2 nanoparticles on (111) Si

C. G. Zimmermann; M. Yeadon; M. Kleinschmit; R. S. Averback; J. M. Gibson

doi:10.1557/PROC-619-97

Reactive cluster epitaxy: CoSi₂ nanoparticles on (111) Si

C. G. Zimmermann, M. Yeadon, M. Kleinschmit, R. S. Averback, J. M. Gibson

Research output: Contribution to journal › Article › peer-review

Abstract

The formation of epitaxial CoSi₂ islands of nanoscopic dimensions is reported using the technique of reactive cluster deposition. Co clusters in the size range 5-50nm were synthesized by sputtering a high purity Co target inside a UHV sputtering chamber. The clusters were then deposited on the reconstructed Si (111) surface. Upon annealing the particles reacted with the Si substrate to form epitaxial CoSi₂. Our observations were made using a JEOL 200CX transmission electron microscope modified for in-situ sputtering and ultrahigh vacuum conditions.

Original language	English (US)
Pages (from-to)	97-102
Number of pages	6
Journal	Materials Research Society Symposium - Proceedings
Volume	619
DOIs	https://doi.org/10.1557/PROC-619-97
State	Published - 2000

ASJC Scopus subject areas

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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10.1557/PROC-619-97

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Cite this

@article{81777d41755b4242a19e0d9b2d4d3769,

title = "Reactive cluster epitaxy: CoSi2 nanoparticles on (111) Si",

abstract = "The formation of epitaxial CoSi2 islands of nanoscopic dimensions is reported using the technique of reactive cluster deposition. Co clusters in the size range 5-50nm were synthesized by sputtering a high purity Co target inside a UHV sputtering chamber. The clusters were then deposited on the reconstructed Si (111) surface. Upon annealing the particles reacted with the Si substrate to form epitaxial CoSi2. Our observations were made using a JEOL 200CX transmission electron microscope modified for in-situ sputtering and ultrahigh vacuum conditions.",

author = "Zimmermann, {C. G.} and M. Yeadon and M. Kleinschmit and Averback, {R. S.} and Gibson, {J. M.}",

note = "Funding Information: The authors acknowledge the use of facilities in the Center for Microanalysis of Materials at the University of Illinois at Urbana-Champaign. This work was funded by the Department of Energy under contract DEFG02-96ER45439.",

year = "2000",

doi = "10.1557/PROC-619-97",

language = "English (US)",

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pages = "97--102",

journal = "Materials Research Society Symposium - Proceedings",

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publisher = "Materials Research Society",

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TY - JOUR

T1 - Reactive cluster epitaxy

T2 - CoSi2 nanoparticles on (111) Si

AU - Zimmermann, C. G.

AU - Yeadon, M.

AU - Kleinschmit, M.

AU - Averback, R. S.

AU - Gibson, J. M.

N1 - Funding Information: The authors acknowledge the use of facilities in the Center for Microanalysis of Materials at the University of Illinois at Urbana-Champaign. This work was funded by the Department of Energy under contract DEFG02-96ER45439.

PY - 2000

Y1 - 2000

N2 - The formation of epitaxial CoSi2 islands of nanoscopic dimensions is reported using the technique of reactive cluster deposition. Co clusters in the size range 5-50nm were synthesized by sputtering a high purity Co target inside a UHV sputtering chamber. The clusters were then deposited on the reconstructed Si (111) surface. Upon annealing the particles reacted with the Si substrate to form epitaxial CoSi2. Our observations were made using a JEOL 200CX transmission electron microscope modified for in-situ sputtering and ultrahigh vacuum conditions.

AB - The formation of epitaxial CoSi2 islands of nanoscopic dimensions is reported using the technique of reactive cluster deposition. Co clusters in the size range 5-50nm were synthesized by sputtering a high purity Co target inside a UHV sputtering chamber. The clusters were then deposited on the reconstructed Si (111) surface. Upon annealing the particles reacted with the Si substrate to form epitaxial CoSi2. Our observations were made using a JEOL 200CX transmission electron microscope modified for in-situ sputtering and ultrahigh vacuum conditions.

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