Reaction rate kinetics and film textures of palladium silicide formed on hydrogenated amorphous silicon

N. R. Manning, Haydn Chen, J. R. Abelson, L. H. Allen

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The reaction rate kinetics of the thin film solid-state reaction between 120 nm of Pd and 100 or 300 nm of a-Si:H(18 at%) to form Pd2Si were studied in situ using x-ray diffraction and four-point probe resistivity measurements during isothermal annealing. These two techniques yielded activation energies and prefactors of Ea = 1.36±0.11 eV with k0 = 4.29 cm2/sec for the x-ray diffraction experiments; and Ea = 0.97±0.22 eV with k0 = 3.42×10-4 cm2/sec for the resistivity measurements. The activation energy and prefactor obtained from the c-Si substrate of the resistivity measurements yielded Ea = 1.41±0.31 eV and k0 = 10.6 cm2/sec. Comparisons showed that the silicide formed from the a-Si:H reacted approximately 1.4 times faster than the silicide formed from the c-Si in the same sample, but three times faster than silicide formed on pure c-Si(111). The crystalline texture and grain size of the metal and silicide films were examined.

Original languageEnglish (US)
Title of host publicationThermodynamics and Kinetics
PublisherPubl by Materials Research Society
Pages311-316
Number of pages6
ISBN (Print)1558992073, 9781558992078
DOIs
StatePublished - 1993
EventProceedings of the Symposium on Phase Transformations in Thin Films - San Francisco, CA, USA
Duration: Apr 13 1993Apr 15 1993

Publication series

NameMaterials Research Society Symposium Proceedings
Volume311
ISSN (Print)0272-9172

Other

OtherProceedings of the Symposium on Phase Transformations in Thin Films
CitySan Francisco, CA, USA
Period4/13/934/15/93

ASJC Scopus subject areas

  • General Materials Science
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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