@inproceedings{81b16a8340be4e539ac3824e6428acc5,
title = "Reaction rate kinetics and film textures of palladium silicide formed on hydrogenated amorphous silicon",
abstract = "The reaction rate kinetics of the thin film solid-state reaction between 120 nm of Pd and 100 or 300 nm of a-Si:H(18 at%) to form Pd2Si were studied in situ using x-ray diffraction and four-point probe resistivity measurements during isothermal annealing. These two techniques yielded activation energies and prefactors of Ea = 1.36±0.11 eV with k0 = 4.29 cm2/sec for the x-ray diffraction experiments; and Ea = 0.97±0.22 eV with k0 = 3.42×10-4 cm2/sec for the resistivity measurements. The activation energy and prefactor obtained from the c-Si substrate of the resistivity measurements yielded Ea = 1.41±0.31 eV and k0 = 10.6 cm2/sec. Comparisons showed that the silicide formed from the a-Si:H reacted approximately 1.4 times faster than the silicide formed from the c-Si in the same sample, but three times faster than silicide formed on pure c-Si(111). The crystalline texture and grain size of the metal and silicide films were examined.",
author = "Manning, {N. R.} and Haydn Chen and Abelson, {J. R.} and Allen, {L. H.}",
year = "1993",
doi = "10.1557/proc-311-311",
language = "English (US)",
isbn = "1558992073",
series = "Materials Research Society Symposium Proceedings",
publisher = "Publ by Materials Research Society",
pages = "311--316",
booktitle = "Thermodynamics and Kinetics",
note = "Proceedings of the Symposium on Phase Transformations in Thin Films ; Conference date: 13-04-1993 Through 15-04-1993",
}