Rapid electro-thermal modeling for 3D integration using circuit simulation techniques

Gene Shiue, Jose Schutt-Aine

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Device-level electro-thermal analysis is studied using circuit simulation schemes with linear computational complexity. Two methods are explored and tested on a MOSFET. Results are compared with a commercial simulator.

Original languageEnglish (US)
Title of host publication2018 IEEE International Symposium on Electromagnetic Compatibility and 2018 IEEE Asia-Pacific Symposium on Electromagnetic Compatibility, EMC/APEMC 2018
PublisherInstitute of Electrical and Electronics Engineers Inc.
Number of pages1
ISBN (Electronic)9781509059973
DOIs
StatePublished - Jun 22 2018
Event60th IEEE International Symposium on Electromagnetic Compatibility and 9th IEEE Asia-Pacific Symposium on Electromagnetic Compatibility, EMC/APEMC 2018 - Suntec City, Singapore
Duration: May 14 2018May 18 2018

Publication series

Name2018 IEEE International Symposium on Electromagnetic Compatibility and 2018 IEEE Asia-Pacific Symposium on Electromagnetic Compatibility, EMC/APEMC 2018

Other

Other60th IEEE International Symposium on Electromagnetic Compatibility and 9th IEEE Asia-Pacific Symposium on Electromagnetic Compatibility, EMC/APEMC 2018
CountrySingapore
CitySuntec City
Period5/14/185/18/18

ASJC Scopus subject areas

  • Aerospace Engineering
  • Electrical and Electronic Engineering
  • Safety, Risk, Reliability and Quality
  • Radiation

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    Shiue, G., & Schutt-Aine, J. (2018). Rapid electro-thermal modeling for 3D integration using circuit simulation techniques. In 2018 IEEE International Symposium on Electromagnetic Compatibility and 2018 IEEE Asia-Pacific Symposium on Electromagnetic Compatibility, EMC/APEMC 2018 (2018 IEEE International Symposium on Electromagnetic Compatibility and 2018 IEEE Asia-Pacific Symposium on Electromagnetic Compatibility, EMC/APEMC 2018). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ISEMC.2018.8394042