Rapid, all-optical crystal orientation imaging of two-dimensional transition metal dichalcogenide monolayers

Sabrina N. David, Yao Zhai, Arend M. Van Der Zande, Kevin O'Brien, Pinshane Y. Huang, Daniel A. Chenet, James C. Hone, Xiang Zhang, Xiaobo Yin

Research output: Contribution to journalArticle

Abstract

Two-dimensional (2D) atomic materials such as graphene and transition metal dichalcogenides (TMDCs) have attracted significant research and industrial interest for their electronic, optical, mechanical, and thermal properties. While large-area crystal growth techniques such as chemical vapor deposition have been demonstrated, the presence of grain boundaries and orientation of grains arising in such growths substantially affect the physical properties of the materials. There is currently no scalable characterization method for determining these boundaries and orientations over a large sample area. We here present a second-harmonic generation based microscopy technique for rapidly mapping grain orientations and boundaries of 2D TMDCs. We experimentally demonstrate the capability to map large samples to an angular resolution of ±1° with minimal sample preparation and without involved analysis. A direct comparison of the all-optical grain orientation maps against results obtained by diffraction-filtered dark-field transmission electron microscopy plus selected-area electron diffraction on identical TMDC samples is provided. This rapid and accurate tool should enable large-area characterization of TMDC samples for expedited studies of grain boundary effects and the efficient characterization of industrial-scale production techniques.

Original languageEnglish (US)
Article number111902
JournalApplied Physics Letters
Volume107
Issue number11
DOIs
StatePublished - Sep 14 2015

Fingerprint

transition metals
crystals
grain boundaries
angular resolution
crystal growth
harmonic generations
graphene
electron diffraction
thermodynamic properties
physical properties
vapor deposition
mechanical properties
microscopy
optical properties
preparation
transmission electron microscopy
electronics
diffraction
metals

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Rapid, all-optical crystal orientation imaging of two-dimensional transition metal dichalcogenide monolayers. / David, Sabrina N.; Zhai, Yao; Van Der Zande, Arend M.; O'Brien, Kevin; Huang, Pinshane Y.; Chenet, Daniel A.; Hone, James C.; Zhang, Xiang; Yin, Xiaobo.

In: Applied Physics Letters, Vol. 107, No. 11, 111902, 14.09.2015.

Research output: Contribution to journalArticle

David, Sabrina N. ; Zhai, Yao ; Van Der Zande, Arend M. ; O'Brien, Kevin ; Huang, Pinshane Y. ; Chenet, Daniel A. ; Hone, James C. ; Zhang, Xiang ; Yin, Xiaobo. / Rapid, all-optical crystal orientation imaging of two-dimensional transition metal dichalcogenide monolayers. In: Applied Physics Letters. 2015 ; Vol. 107, No. 11.
@article{53bb37eba0724926922383fa0eb6af10,
title = "Rapid, all-optical crystal orientation imaging of two-dimensional transition metal dichalcogenide monolayers",
abstract = "Two-dimensional (2D) atomic materials such as graphene and transition metal dichalcogenides (TMDCs) have attracted significant research and industrial interest for their electronic, optical, mechanical, and thermal properties. While large-area crystal growth techniques such as chemical vapor deposition have been demonstrated, the presence of grain boundaries and orientation of grains arising in such growths substantially affect the physical properties of the materials. There is currently no scalable characterization method for determining these boundaries and orientations over a large sample area. We here present a second-harmonic generation based microscopy technique for rapidly mapping grain orientations and boundaries of 2D TMDCs. We experimentally demonstrate the capability to map large samples to an angular resolution of ±1° with minimal sample preparation and without involved analysis. A direct comparison of the all-optical grain orientation maps against results obtained by diffraction-filtered dark-field transmission electron microscopy plus selected-area electron diffraction on identical TMDC samples is provided. This rapid and accurate tool should enable large-area characterization of TMDC samples for expedited studies of grain boundary effects and the efficient characterization of industrial-scale production techniques.",
author = "David, {Sabrina N.} and Yao Zhai and {Van Der Zande}, {Arend M.} and Kevin O'Brien and Huang, {Pinshane Y.} and Chenet, {Daniel A.} and Hone, {James C.} and Xiang Zhang and Xiaobo Yin",
year = "2015",
month = "9",
day = "14",
doi = "10.1063/1.4930232",
language = "English (US)",
volume = "107",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "11",

}

TY - JOUR

T1 - Rapid, all-optical crystal orientation imaging of two-dimensional transition metal dichalcogenide monolayers

AU - David, Sabrina N.

AU - Zhai, Yao

AU - Van Der Zande, Arend M.

AU - O'Brien, Kevin

AU - Huang, Pinshane Y.

AU - Chenet, Daniel A.

AU - Hone, James C.

AU - Zhang, Xiang

AU - Yin, Xiaobo

PY - 2015/9/14

Y1 - 2015/9/14

N2 - Two-dimensional (2D) atomic materials such as graphene and transition metal dichalcogenides (TMDCs) have attracted significant research and industrial interest for their electronic, optical, mechanical, and thermal properties. While large-area crystal growth techniques such as chemical vapor deposition have been demonstrated, the presence of grain boundaries and orientation of grains arising in such growths substantially affect the physical properties of the materials. There is currently no scalable characterization method for determining these boundaries and orientations over a large sample area. We here present a second-harmonic generation based microscopy technique for rapidly mapping grain orientations and boundaries of 2D TMDCs. We experimentally demonstrate the capability to map large samples to an angular resolution of ±1° with minimal sample preparation and without involved analysis. A direct comparison of the all-optical grain orientation maps against results obtained by diffraction-filtered dark-field transmission electron microscopy plus selected-area electron diffraction on identical TMDC samples is provided. This rapid and accurate tool should enable large-area characterization of TMDC samples for expedited studies of grain boundary effects and the efficient characterization of industrial-scale production techniques.

AB - Two-dimensional (2D) atomic materials such as graphene and transition metal dichalcogenides (TMDCs) have attracted significant research and industrial interest for their electronic, optical, mechanical, and thermal properties. While large-area crystal growth techniques such as chemical vapor deposition have been demonstrated, the presence of grain boundaries and orientation of grains arising in such growths substantially affect the physical properties of the materials. There is currently no scalable characterization method for determining these boundaries and orientations over a large sample area. We here present a second-harmonic generation based microscopy technique for rapidly mapping grain orientations and boundaries of 2D TMDCs. We experimentally demonstrate the capability to map large samples to an angular resolution of ±1° with minimal sample preparation and without involved analysis. A direct comparison of the all-optical grain orientation maps against results obtained by diffraction-filtered dark-field transmission electron microscopy plus selected-area electron diffraction on identical TMDC samples is provided. This rapid and accurate tool should enable large-area characterization of TMDC samples for expedited studies of grain boundary effects and the efficient characterization of industrial-scale production techniques.

UR - http://www.scopus.com/inward/record.url?scp=84941992340&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84941992340&partnerID=8YFLogxK

U2 - 10.1063/1.4930232

DO - 10.1063/1.4930232

M3 - Article

AN - SCOPUS:84941992340

VL - 107

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 11

M1 - 111902

ER -