Rank modulation for translocation error correction

Farzad Farnoud, Vitaly Skachek, Olgica Milenkovic

Research output: Chapter in Book/Report/Conference proceedingConference contribution


We consider rank modulation codes for flash memories that allow for handling arbitrary charge drop errors. Unlike classical rank modulation codes used for correcting errors that manifest themselves as swaps of two adjacently ranked elements, the proposed translocation codes account for more general forms of errors that arise in storage systems. Translocations represent a natural extension of the notion of adjacent transpositions and as such may be analyzed using related concepts in combinatorics and rank modulation coding. Our results include deriving the asymptotic capacity of translocation rank codes, construction techniques for asymptotically good codes and a simple decoding algorithm.

Original languageEnglish (US)
Title of host publication2012 IEEE International Symposium on Information Theory Proceedings, ISIT 2012
Number of pages5
StatePublished - 2012
Event2012 IEEE International Symposium on Information Theory, ISIT 2012 - Cambridge, MA, United States
Duration: Jul 1 2012Jul 6 2012

Publication series

NameIEEE International Symposium on Information Theory - Proceedings


Other2012 IEEE International Symposium on Information Theory, ISIT 2012
Country/TerritoryUnited States
CityCambridge, MA

ASJC Scopus subject areas

  • Theoretical Computer Science
  • Information Systems
  • Modeling and Simulation
  • Applied Mathematics


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