Random Field Driven Spatial Complexity at the Mott Transition in VO2

Shuo Liu, B. Phillabaum, E. W. Carlson, K. A. Dahmen, N. S. Vidhyadhiraja, M. M. Qazilbash, D. N. Basov

Research output: Contribution to journalArticle

Abstract

We report the first application of critical cluster techniques to the Mott metal-insulator transition in vanadium dioxide. We show that the geometric universal properties of the metallic and insulating puddles observed by scanning near-field infrared microscopy are consistent with the system passing near criticality of the random field Ising model as temperature is varied. The resulting large barriers to equilibrium may be the source of the unusually robust hysteresis phenomena associated with the metal-insulator transition in this system.

Original languageEnglish (US)
Article number036401
JournalPhysical review letters
Volume116
Issue number3
DOIs
StatePublished - Jan 22 2016

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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    Liu, S., Phillabaum, B., Carlson, E. W., Dahmen, K. A., Vidhyadhiraja, N. S., Qazilbash, M. M., & Basov, D. N. (2016). Random Field Driven Spatial Complexity at the Mott Transition in VO2. Physical review letters, 116(3), [036401]. https://doi.org/10.1103/PhysRevLett.116.036401