Abstract
Use of high ramp rates (>400°C/s) in rapid thermal annealing after ion implantation leads to experimentally observed improvements in junction depth and the reverse narrow-channel effect. However, a straightforward explanation for this effect has been lacking. Via modeling, we find that increasing the heating rate permits clusters with dissociation energies lower than the maximum of 3.5-3.7 eV to survive to higher temperatures. This improved survival delays the increase in Si interstitial concentrations near the top of an annealing spike, which decreases the profile spreading.
| Original language | English (US) |
|---|---|
| Pages (from-to) | G838-G842 |
| Journal | Journal of the Electrochemical Society |
| Volume | 150 |
| Issue number | 12 |
| DOIs | |
| State | Published - Dec 2003 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Renewable Energy, Sustainability and the Environment
- Surfaces, Coatings and Films
- Electrochemistry
- Materials Chemistry