Ramp-rate effects on transient enhanced diffusion and dopant activation

M. Y.L. Jung, R. Gunawan, R. D. Braatz, E. G. Seebauer

Research output: Contribution to journalArticle

Abstract

Use of high ramp rates (>400°C/s) in rapid thermal annealing after ion implantation leads to experimentally observed improvements in junction depth and the reverse narrow-channel effect. However, a straightforward explanation for this effect has been lacking. Via modeling, we find that increasing the heating rate permits clusters with dissociation energies lower than the maximum of 3.5-3.7 eV to survive to higher temperatures. This improved survival delays the increase in Si interstitial concentrations near the top of an annealing spike, which decreases the profile spreading.

Original languageEnglish (US)
Pages (from-to)G838-G842
JournalJournal of the Electrochemical Society
Volume150
Issue number12
DOIs
StatePublished - Dec 1 2003

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films
  • Electrochemistry
  • Materials Chemistry

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